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As volume requirements increase, installing additional equipment to meet the demand is the only viable option. Selecting systems designed with a compact footprint is advisable to minimise the overall operating space. Ensuring easy access for streamlined maintenance is also crucial in reducing production downtime.


To ensure profitability, it is crucial that the crystal growing systems not only demonstrate exceptional reliability but also operate with remarkable energy efficiency. These requirements are necessary as the process requires a furnace capable of reaching temperatures exceeding 2,000 °C for extended periods of time.


Furthermore, crystal growing systems should be adaptable to accommodate shifts or changes in the industry, such as the transition from 6” to 8” wafers or the manufacturing of aluminum nitride (AIN) boules for electronics. The fourth-generation crystal growing system developed by PVA, known as SiCma, has been meticulously designed to meet the specific requirements in the production of silicon carbide. This state-of-the-art system boasts the capability to produce monocrystal boules of SiC in diameters ranging from 4 to 8 inches, subsequently used for wafer fabrication.


The PVA team incorporated significant improvements that allow for reliable mass production due to its high degree of automation and compact footprint. Additional


options are available to customers, like a mobile transfer system, multiple vacuum pump options, and measuring devices, which are easily incorporated to enhance the system functionality further.


The crystal growing system is designed for efficient energy consumption to achieve optimal cost efficiency. “The process can require temperatures up to 2,600°C and consume up to 20 kilowatts over several weeks, depending on the size of the boule, so manufacturers need to be as energy efficient as possible,” says Ried. SiCma achieves this by utilising inductive heating in the kilohertz range using an induction coil designed for minimal energy consumption.


To effectively enter the SiC market and achieve desired production volumes, manufacturers frequently need timely delivery of sufficient equipment to scale up their capacity rapidly.


“Manufacturers need SiC furnaces assembled and shipped fast when they scale for production. Once they validate their process on a machine, they may need a hundred units quickly,” says Ried, adding that, when necessary, PVA can deliver several machines per week to a manufacturer.


Market Adaptation: Survival of the Fittest


Manufacturers also require a versatile platform that can adapt to the evolving needs of an ever-changing market. An


upcoming demand for larger wafer sizes, consequently requiring larger boules, presents challenges for manufacturers. They may encounter difficulties requiring investment in another system model requiring allocation of additional production space to accommodate the larger size boules. According to an analysis from McKinsey & Company, “a transition from the production and use of six-inch wafers to eight-inch wafers is anticipated, with material uptake beginning around 2024 or 2025 and 50 percent market penetration reached by 2030. Once technological challenges are overcome, eight-inch wafers offer manufacturers gross margin benefits from reduced edge losses, a higher level of automation, and the ability to leverage depreciated assets from silicon manufacturing.”


Implementing a modular crystal growing system fosters heightened flexibility in response to evolving market demands. For instance, SiCma enables the utilisation of components from multiple vendors, including customised components such as process chambers with varying diameters. As a result, the system accommodates the growth of both 6-inch and 8-inch SiC boules by simply adjusting the chamber size.


Recently, there has also been a notable uptick in market demand for aluminum nitride (AlN) wafers. This non-oxide ceramic material, comprised of aluminum and nitrogen, is witnessing substantial growth in its utilisation for electronic devices as well as electric vehicles (EVs).


Aluminum nitride boasts exceptional thermal conductivity, enabling efficient heat dissipation in power modules and electronic components. Additionally, AlN functions as an electrical insulator, making it an invaluable material in electronic applications where electrical insulation and effective heat management are necessary.


Utilising an AlN source material, specialised furnaces like PVA’s facilitate the growth of monocrystalline AlN boules at temperatures surpassing 2000°C.


As the transition to EVs, renewable energy, and electrification progresses, the need for SiC and AlN will dramatically surge, requiring large numbers of single crystal growing systems within tight production quarters. Manufacturers who partner with a reputable OEM that can customise crystal growing systems and prioritise intellectual property protection will secure a competitive advantage in this rapidly expanding market.


Author


There is an imperative to rapidly expand the production of SiC crystals to serve the current and future generations of electric vehicles (EVs) and advanced electronic devices.


Del Williams is a technical writer based in Torrance, California.


MARCH 2024 | ELECTRONICS FOR ENGINEERS 11


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