NEWS
Specialized systems are needed to produce large quantities of ultra-pure SiC crystals, similar to “server farms” utilized by large organizations.
resulting in enhanced efficiency, extended vehicle range, and reduced total system cost for powertrains. These benefits are particularly significant at higher voltages required by battery electric vehicles (BEVs), which are expected to dominate the electromobility sector by 2030.
“The SiC device market, valued at around $2 billion today, is projected to reach $11 billion to $14 billion in 2030, growing at an estimated 26 percent [compound annual growth rate]. Given the spike in EV sales and SiC’s compelling suitability for inverters, 70 percent of SiC demand is expected to come from EVs,” states the McKinsey & Company article “New silicon carbide prospects emerge as the market adapts to EV expansion.” As the demand continues to rise, manufacturers are encountering the task of rapidly expanding SiC crystal production to unprecedented levels. SiC production is time-consuming; growing a single crystal ingot, also known as a boule, can take a few weeks to produce. To produce the required large quantities of ultra-pure SiC crystals, specialised growing systems are often grouped in sets of tens or hundreds, similar to the design and construction of “server farms” that consolidate data for large organisations. Producers of SiC growing systems must be adaptable to customise and protect the unique system design elements required to meet each customer’s individual intellectual property (IP) requirements since specific crystal growing techniques are closely guarded secrets. Furthermore, it is crucial to have highly dependable and easily
Providers of crystal-growing systems must be adaptable to customize and protect customers’ unique IP requirements while also offering dependable and easily maintainable systems.
maintainable crystal growing systems that offer the necessary flexibility to accommodate future market changes in wafer size or composition.
Manufacturers may need help acquiring enough crystal growing systems within the timeframes required. Fortunately, leading providers of crystal-growing systems now offer specialised and customisable solutions to meet the industry’s unique process and intellectual property needs. These solutions enable scalable production per market demands.
“The growth of crystals is primarily influenced by the manufacturer’s intellectual property and the methodologies employed in seed mounting and process control. Therefore, a versatile platform for crystal growth is essential for manufacturers to refine and validate their processes, enabling seamless scalability for mass production. This necessitates collaboration with a dependable supplier capable of rapidly producing high volumes of these machines – on demand,” says Frank Ried, Project Manager, PVA Crystal Growing Systems GmbH, a subsidiary of PVA TePla Group.
PVA Crystal Growing Systems develop and construct machinery for several industrial methods of producing ultra- pure monocrystals, including Physical Vapor Transport, Cz (Czochralski), FZ (Float Zone), and VGF (Vertical Gradient Freeze). The systems grow silicon carbide, silicon, germanium, calcium fluoride, and compound semiconductors.
A Custom SiC Crystal Growing Process
To achieve optimal growth of SiC crystals, EV/HEV and electronics manufacturers, as well as semiconductor companies, dedicate substantial resources to research and development. This research encompasses the development of seed crystals, the selection of growth conditions, and other parameters that impact the properties of the crystals. Given the significance, these specifics and other nuances and optimisations are usually regarded as proprietary information safeguarded by companies to retain a competitive advantage.
“Custom PVT systems are available that ensure protection and exclusivity of their intellectual property. These tools are customised to meet manufacturers’ specific requirements, necessitating the utilisation of premium engineering capabilities,” says Ried. According to Ried, the widely accepted technique for monocrystalline silicon carbide growth involves sublimation growth with a seed crystal, which is commonly referred to as Physical Vapor Transport (PVT). In this process, SiC source material, usually SiC powder, is transferred to the gaseous phase by sublimation at temperatures from 1,800– 2,600°C. A SiC single crystal is subsequently formed from the gaseous components at a given seed substrate.
For manufacturers, working with an expert provider of crystal growing systems that can meet their production demands and tailor the equipment to their evolving needs is essential now and in the future.
10 MARCH 2024 | ELECTRONICS FOR ENGINEERS
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