Journal Highlights
Techniques
T ree-Dimensional Nanoscale Mapping of State-of-the-Art Field-Eff ect Transistors (FinFETs) by P Parikh, C Senowitz, D Lyons, I Martin, TJ Prosa, M DiBattista, A Deavraj, and YS Meng, Microsc Microanal 23(5) (2017) 916–25
As transistor channel widths reach below 20 nm, device performance parameters, such as channel current density, can be aff ected by fl uctuations in the channel width and fi n wall roughness. T is warrants the need for a deeper understanding of physical nanoscale features in individual transistors and their eff ects on device performance. Current scanning electron microscopy and mass spectrometry techniques do not provide the required resolution to probe the nanometer scale of the devices. Using atom probe tomography (APT) and scanning transmission electron microscopy energy dispersive x-ray spectroscopy (STEM-EDS), we provide a three-dimensional picture of commercial state-of-the- art 14 nm devices. Our techniques enable us to study the chemical composition of PMOS and NMOS fi ns in 3D, allowing for visualization of the fi n and the individual gate dielectric layers. Diff erences in NMOS and PMOS, such as fi n width, absence of Ge from NMOS fi ns, and thickness of the gate dielectrics, are consistent across both techniques. We believe APT is an important high-resolution 3D technique that will allow study of future transistor generations.
Left: Shows a 3D view of a NMOS fi n with the Si fi n and the gate dielectric layers; HfO2 and AlCx sandwiched between TiN layers obtained using APT. Right: 2D view of the NMOS fi n using STEM-EDS.
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