Product News I Power Management
DTM-C range of medical AC-DC external power supplies
TDK-Lambda UK has introduced the DTM-C series of medically-certified AC-DC external power supplies – the DTM65-C model with output power ratings from 40 to 65W and the DTM110-C rated at 90 to 110W. Offered with a choice of output voltages
from 12 to 48Vdc, the DTM-C series operates from a universal AC input of 90 to 264Vac (47- 63 Hz). With average efficiency greater than 87% and offload power consumption of less than 0.5W, all models in the DTM-C series comply with ErP (Energy Related Products), EISA (Energy Independence and Security Act of 2007), CEC (Californian Energy Commission) and Global Efficiency Level V regulations. These external power supplies are packaged
in low profile, insulated enclosures and are convection cooled. The operating temperature range is from 0 up to 50°C (DTM65-C) and 0 to 40°C (DTM110-C) at full load without derating. With 4kVac input to output isolation, all models in the DTM-C series comply with UL/EN/IEC60601-1 Editions 2 & 3 safety
approvals for medical equipment. These highly efficient external adapters include over voltage and short circuit protection circuitry. In addition, the DTM65-C meets the EN55011 and EN60601-1-2 Class B conducted and radiated EMI standards; DTM110-C meets EN55022 and FCC Part 18 Class B conducted and radiated EMI standards and harmonic correction to EN61000-3-2. All models in the DTM-C range meet EN55024 for immunity and Safety Class I (Altitude 2000m), are CE marked and can withstand 20G shock.
TDK Lambda |
www.uk.tdk-lambda.com
LinkSwitch-PH LED driver IC available in low-profile package
Power Integrations has unveiled the LinkSwitch- PH LED driver IC in a low-profile eSIP-L package measuring just 2 mm high. The package targets LED-based replacements for fluorescent tubes, where very low-profile packages are required to fit into the small space available behind the LED circuit board, as well as other applications where board height is constrained.
The devices have the same thermal and electrical performance as previously released ICs in the 10 mm high eSIP-E package and feature a heat transfer tab on top of the device which is electrically quiet (source potential) so any additional heatsink does not contribute to electrical noise propagation.
The LinkSwitch-PH single-stage, primary-side
controlled, LED driver ICs feature >90% efficiency and >0.9 power factor. The device’s topology eliminates the need for unreliable electrolytic capacitors and opto-isolators, making it especially well-suited for high-reliability industrial, commercial, and exterior solid-state lighting (SSL) applications. Suitable for designs from 4 W to 55 W, SSL driver ballasts based on
www.element14.com www.farnell.co.uk
LinkSwitch-PH ICs easily satisfy ENERGY STAR and EN61000-3-2 class C and D requirements. A new reference design featuring LinkSwitch- PH in the new eSIP-L package, RDR-257, describes a non-isolated, power-factor corrected, low-THD, high-efficiency LED driver circuit that fits inside a T8 tube fixture. The design powers an LED string with a nominal voltage of 36 V at a current of 330 mA, and operates from an input voltage range of 90 VAC to 265 VAC.
Power Integrations |
www.powerint.com
New 48V technology from Nitronex enables more reliable RF power products
Nitronex, a designer and manufacturer of gallium nitride (GaN) based RF solutions for high performance applications, has developed a 48V GaN-on-Si process platform. Designated NRF2, this new platform delivers double the power density, 1-2dB higher gain, improved broadband performance, higher breakdown voltage and higher supply voltage operation over Nitronex's 28V NRF1 process technology. The new technology further increases the
reliability for GaN-on-Si, with more than one million hours (114 years) mean time to failure (MTTF) at an operating junction temperature of 230°C using a stringent 10% drift failure criteria. In addition, improvements in thermal management in initial 48V products have demonstrated thermal resistance reduction of more than 40% compared to existing Nitronex products. The NRF2 process platform heavily leverages Nitronex's existing NRF1 platform, which has been used to ship more than 500,000 production devices (including more than 50,000 MMICs) since volume shipments began in 2009.
Commenting Ray Crampton, VP of Engineering said "In addition to increased reliability and RF performance, we have demonstrated robustness to 15:1 output VSWR
www.cieonline.co.uk
at all angles at 90°C flange temperature under saturated drive conditions." Nitronex's patented SIGANTIC GaN-on-Si
process is the only production-qualified GaN process using an industry standard 4" silicon substrate. This results in a robust, scalable supply chain and positions Nitronex well for the growth expected from emerging GaN markets such as military communications, CATV, RADAR, commercial wireless, satellite communications and point to point microwave. Additional technology under development includes a 48V MMIC process platform. Initial 48V samples are available now with pre-production and production quantities available in early 2012.
Nitronex |
www.nitronex.com Components in Electronics December 2011/January 2012 23
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