Torsionally Stabilized Nano Impedance Microscopy
in impedance is then entirely attributed to the molecule.
Materials and Methods For TR-NIM experiments,
Figure 1: Torsional resonance nanoimpedance microscopy (TR-NIM) schematic diagram (a). An AC bias is applied to the tip/sample, and the alteration in this signal due to the impedance of the sample is output to the amplifier. The signal from the amplifier is summed with the compensating signal to account for the capacitance of the entire system. This combined signal then enters the lock-in amplifier. The output of the lock-in is fed into the microscope controller for analysis. (b) Schematic illustration of the tip-surface junction allowing photo excitation of patterned protein layers. (b) is from Kathan-Galipeau et al., ACS Nano 4835, copyright 2011, with permission of ACS.
the system and the impedance of the sample. Given the film size and properties, a significant contribution to the signal is noise from the system’s capacitive coupling. Tere is capacitive coupling related to the cantilever, cantilever holder, and other structural components of the AFM. Terefore, the nulling signal is used to account for most of the effect of these other signals. It is assumed that the impedances of the graphite and sample are in parallel. Assuming the molecule can be represented as an RC
circuit [20], R =
102VG sX
and C = sY 102VGω (1, 2)
where R = resistance, C = capacitance, V = applied voltage, ω = frequency, s = sensitivity of lock-in amplifier, G = gain of current amplifier, and X and Y = output of lock-in amplifier. (2 is required because Vo is an RMS voltage; 10 is a conversion factor within the lock-in amplifier.) Te values for X and Y are relative to that of the graphite. If the compensating signal is perfect, we measure zero impedance over graphite. Te change
a platinum-iridium coated tip was used; fo = 146–236 kHz and k = 21–98 N/m (Nano- sensors). Te AFM instrumen- tation was performed on a Veeco Dimension 3100 with a IVa controller. Two current amplifiers were used, which together provide a gain range of 1 × 102 – 1 × 1011 V/A (Femto DLPCA-200, DHPCA-100) Two lock-in amplifiers provided a frequency range from 1 mHz–200 MHz (SRS830,
SRS844). Te AC signal can be applied in a range from 1 µHz to 30 MHz (SRS DS345). Te sum box has a range from 0.002–60 MHz (Mini-Circuits ZSC-2-2).
TR-NIM on Hard Materials To demonstrate the effectiveness of TR-NIM for probing
dielectric behavior, Figure 2 shows a typical TR-NIM image of CdTe. Figure 2 shows the topography, amplitude, and phase of impedance (leſt to right). At 70 kHz, the resistance is 8035 kΩ, and the capacitance is 21.3 fF. A dielectric con- stant of 10.1 was determined from these images, assuming 1 mm thick CdTe and a 8.7 nm tip size. In comparison, the literature value of the dielectric constant of CdTe is 10.9 [21]. Tis agreement provides confirmation of the effectiveness of TR-NIM for determining the dielectric constant of materials.
TR-NIM on Soft Materials: Biomolecules Toward Protein-Based Circuits
Recently, the appreciation of the high energy yield and
quantum efficiencies of a number of natural photo-activated proteins, in the context of a decade of research on molecular electronics, has raised the possibility of new nanoelectronic
Figure 2: TR-NIM image of CdTe 〈0001〉 topography, amplitude, and phase of impedance (left to right). Height z-range = 15 nm, amplitude range = 80 mV, phase range = 120 mV. Parameters: 70 kHz, 0.5 V applied signal, gain = 109, sensitivity = 5 mV. Platinum-iridium coated cantilevers were used with the following properties: resonant frequency = 146–236 kHz, spring constant = 21–98 N/m, and tip radius ~ 40 nm.
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