Power


(Left) Figure 2: Simplifi ed schematic for a 1 kW 48 VIN and 12 VOUT LLC DCDC con- verter based on the EPC9159 reference design.


the smaller package. This lower RDS(on)


is the


primary factor responsible for reducing losses by more than 3 W. This enables the converter to either be used with higher effi ciency, or, using the extra space coming from the smaller GaN devices, the transformer can be enlarged to reduce converter losses even further. The EPC2366 40 V GaN transistor is the


fi rst of a family of GaN devices based on EPC’s Generation 7 platform. The 40 V GaN


transistor is 2.7 times smaller than the best MOSFET technology for the same voltage and RDS(on)


. This same technology can yield similar relative performance at even lower voltages, and EPC plans to introduce devices as low as 15 V later in 2025.


With this release, the fi nal stronghold of the silicon power MOSFET has been breached.


epc-co.com


(Right) Figure 3: Power loss breakdown for a 1 kW 48:12 V LLC DC-DC converter used in artifi cial intelligence servers. The left bars are for the various loss components in a converter using the best MOSFET available for the synchronous rectifi er stage. The right bars show the improvement when using the 40 V GaN transistor, EPC2366.


References: [1]


[2]


datasheet.pdf [3]


[4]


A. Lidow et al., “GaN Power Devices for Effi cient Power Conversion,” Fourth Edition, J. Wiley, 2025. EPC2367 Data Sheet: https://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2367_


EPC2366 Data Sheet: https://epc-co.com/epc/products/gan-fets-and-ics/epc2366 EPC9159 Quick Start Guide: https://epc-co.com/epc/Portals/0/epc/documents/guides/EPC9159_qsg.pdf


www.cieonline.co.uk


Components in Electronics


June 2025 23


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