Supplement: Power
20A models added to 1/16th brick footprint DC-DC buck converter series, enhancing performance with a 28-60V input
T
DK Corporation has expanded the TDK-Lambda i7A series of non- isolated buck (step-down) DC-DC converters with the industry- standard 1/16th brick pinout. 20A output models with a 500W maximum rating are now available, offering a trimmable 3.3 - 32V* output capability and operation from 28V up to 60V input. An adjustable over-current limit is also available as an option, reducing stress on the converter or load when exposed to excessive overcurrent conditions and facilitating fine-tuning based on actual system requirements. The 20A i7A models can be used to derive additional high-power outputs at a lower cost and higher efficiency than isolated DC-DC converters. These very compact products are suited for use in mobile robotics, drones, medical, industrial, test and measurement, communications, computing, and portable battery-powered equipment.
Efficiencies of up to 96 per cent minimise internal losses and allow the 20A i7A models to operate in ambient temperatures of
Like the i7A 33A, 45A and 60A versions, the 20A offers a choice of three mechanical configurations, measuring just 34mm wide and 36.8mm in length. The 11.5mm high open-frame model is suitable for applications requiring a low profile and weighs just 25g. The baseplate version can be conduction- cooled to a cold plate and is 12.7mm high. Models with an integral heatsink, which are for convection or forced air cooling, are 24.9mm high.
The i7A standard features include output voltage adjustment, positive remote sense, negative logic remote on-off, input under- voltage, over-current and over-temperature protection. Evaluation boards are available for simplified qualification.
-40°C up to +125°C, even with low airflow conditions. The i7A’s design provides low output ripple and impressive response to
dynamic loads. Minimal external components are required, compared to discrete solutions, saving cost and printed circuit board space.
More information on the i7A 20A models can be found at:
https://product.tdk.com/system/files/dam/doc/product/power/switching-power/dc-dc-converter/catalog/i7a_e.pdf *See datasheet for operating conditions
All models have safety certification to the IEC/UL/CSA/EN 62368-1 standards, with CE and UKCA marking to the Low Voltage and RoHS Directives.
New eBook from Mouser Electronics and onsemi highlights the benefits of silicon carbide power electronics
M
ouser Electronics, the authorised global distributor of electronic components and industrial automation
products, has produced a new eBook in collaboration with onsemi, exploring the use of silicon carbide (SiC) semiconductors for power system design. SiC devices are described as revolutionising power electronics with their superior material properties, enabling more efficient, compact, and sustainable power systems. In Enabling a Sustainable Future with Silicon Carbide Power Electronics, onsemi explores the benefits of SiC, its applications in electric vehicles and renewable energy, and the importance of choosing the right SiC partner. A trusted supplier of power solutions, onsemi offers high-quality SiC devices, a reliable supply chain, and comprehensive design support. The eBook includes convenient links
30 July/August 2024
to select onsemi power products, such as the NTBG014N120M3P EliteSiC MOSFET. The NTBG014N120M3P is a 1200V M3P planar SiC MOSFET optimised for power applications. Planar technology works reliably with negative gate voltage drives and turns off spikes on the gate. This device is suitable for use in solar inverters, electric vehicle charging stations, energy storage systems, and switch-mode power supplies. The NVBG1000N170M1 EliteSiC MOSFET, also available from Mouser, is a 1700V M1 planar device optimised for fast switching applications. This device is AEC− Q101 qualified and PPAP capable, making it suitable for use in electric vehicles (EV) and hybrid electric vehicles (HEV). In EVs and HEVs, the advantages of SiC devices translate into power solutions that are smaller, lighter, and more efficient. Less energy is wasted, leading to a reduction in
the number of expensive batteries required. The NCP51705 gate drive is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable of delivering the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on
and turn-off, switching losses are minimised. The NCP51560 isolated dual-channel gate driver is designed for fast switching to drive power SiC MOSFET power switches. Two independent galvanically isolated gate driver channels can be used in any possible
To read the new eBook from Mouser and onsemi, visit:
https://resources.mouser.com/manufacturer-ebooks/onsemi-enabling-a-sustainable-future-with-silicon-carbide-power-electronics-mg/ Components in Electronics
www.cieonline.co.uk
configurations of two low-side, two high- side switches or a half-bridge driver with programmable dead time. The NCP51560 offers other important protection functions, such as independent under-voltage lockout for both gate drivers.
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