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can reduce system costs through techniques like on-chip trimming and calibration of external sensors.
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Pivoting to a new process design The advantages of newer processes, such as 130nm and 180nm, are undeniable. These technologies offer superior performance, lower power consumption and higher reliability thanks to innovations like copper metallization and shallow trench isolation. The transition to larger 12-inch wafers has further solidified their position as industry standards, providing optimal performance and cost-effectiveness for modern applications and very importantly providing longevity of supply. However, the recent spate of last-buy notifications prompted concern from some in the industry who have developed ASIC regarding issues such as re-design costs and migration complexity. Let’s take a closer look at what design migration might entail, both in terms of its opportunities and the considerations that manufacturers will need to address.
Migrating from older processes like 600nm or 350nm to more advanced technologies such as 180nm or 130nm offers numerous advantages. The numbers speak for themselves (see table).
These newer processes boast higher logic and memory density, enabling the integration of more complex and powerful circuits within a smaller silicon footprint. This translates to enhanced product capabilities and improved performance.
These advanced processes can support higher clock frequencies or lower power consumption, depending on specific design requirements. The adoption of copper metallization and multiple metal layers significantly improves signal integrity and reduces the risk of electromigration, particularly for high-speed signals. Additionally, shallow trench isolation (STI) technology enhances transistor density and mitigates the risk of latch-up, a common reliability issue in older processes.
Migration 101: overcoming the challenges
Having been issued with last-buy notifications, many companies rightly voiced concern about the compatibility of future ASICs with existing designs. Leading foundries such as GlobalFoundries, TSMC, XFAB and Keyfoundry have excellent technology offerings that will help facilitate a smooth migration from 600nm technology. These cover the many factors that contribute to a seamless migration, from product innovation to supply chains to updated processes. Many newer processes provide options for maintaining compatibility with older 5V I/O standards while enjoying the benefits of more modern designs using dual gate oxide options. In effect this means designs can be updated with very few changes to their original specifications. The availability of a wide range of third-party intellectual property (IP) cores, both analogue and digital, simplifies the integration of additional functionalities that were previously unattainable with 600nm processes. This migration to modern processes is particularly crucial for industries like automotive manufacturing, where stringent industry standards and a reliable supply chain are paramount.
The advanced lithography employed for 12-inch wafers results in fewer defects and improved device matching, leading to higher manufacturing yields. Additionally, mature 130nm BCD process technologies offer a diverse range of process options, including high-voltage transistors, non-volatile memory (Flash), and various passive components. This enables the integration of complex analogue and RF functions into competitive system- on-chip (SoC) solutions. By integrating more functionalities onto a single chip, designers
20 December/January 2025 Components in Electronics
The smaller feature size of 130nm processes also facilitates the integration of low-power microprocessors like Arm Cortex-M or RISC-V cores with minimal additional silicon area. The specific CPU performance and memory requirements will ultimately determine the feasibility of integration, but with a relatively small silicon footprint, these cores can be efficiently integrated alongside other functionalities. Another key challenge centres around the practicalities of re-designing systems, such as ensuring a realistic scope of work, timescales and milestones are established from the start. Migration from a 600nm or 350nm design to 130nm involves multiple steps, typically beginning with a comprehensive audit of strategic aims including the backward compatibility requirements and the new design functionality. A full re-design requires planning, technology selection, design, simulation, validation phases and device and product qualification. Depending on specific design complexities, it could take several months and the additional manufacturing cycle taking another three to four months. It’s important to note that the existence of legacy design databases does not guarantee a straightforward migration process. However, in cases where relatively few changes are required, modest modifications can be done more quickly.
Why smaller really is better The transition to smaller nodes like 130nm offers several advantages. Smaller transistors enable higher performance and lower power consumption. Additionally, these nodes support higher levels of integration, allowing for more complex functionalities on a single chip. This can lead to smaller, more powerful devices. However, the migration process requires careful planning and execution, including design compatibility assessments and potential re-design efforts.
There are other opportunities, too, in the phasing-out of 600nm technology. These include integrating advanced features like on-chip sensors, improving product performance and efficiency, and extending product lifespans. What we’re witnessing is a move toward a new industry standard, and early adopters of that standard will be best poised to take advantage of new market opportunities and innovations.
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