Lasers ♦ news digest
POET is trying to move towards the goal of 100nm feature sizes for the transistors within the POET platform, and has stabilised feature definition at the sub-200-nm level.
Short channel considerations are being addressed with new innovations,and the step of isolating source-drain and gate contacts with oxygen implantation is nearing completion.
III-V foundry capabilities hope to demonstrate greater than 20x speed improvement together with lower power consumption by 4x to 10x, depending on the application, compared to silicon at smaller nodes.
Although timelines are always subject to review depending on partner needs, the technical team sees no significant technical roadblocks ahead. POET anticipates completion of the 100 nm milestone by the end of April 2014.
Trying to optimise device parameters and yields, the company is focusing on establishing POET’s technology design kits (TDKs). The TDKs comprise a comprehensive design rules and device parameter library for POET, and will enable customers and partners to implement the POET process into preferred foundries.
The TDKs will also help licensed designs in a POET device ecosystem to proliferate and help existing silicon library functions to migrate to POET technology-based circuitry in a minimum amount of time.
The company is reporting that with the help of select potential POET Development Alliance (PDA) partners, progress on this milestone is ahead of the schedule set by the former Special Strategic Committee.
Copetti notes, “It is gratifying to see our excitement shared by others, and we hope that excitement will be infectious as we head into the Global Semiconductor Forum. We have a relentless focus on securing our intellectual property and in forging ties to industry, and this positions POET Technologies in its drive to extend Moore’s Law to the next level.”
Rofin acquires FiLaser’s assets
Part of the assets include FiLaser’s unique laser cutting technology
Rofin-SINAR Technologies Inc. and FiLaser USA LLC. have entered into an Asset Purchase Agreement, under which Rofin will acquire the assets of FiLaser and its
subsidiaries.
The transaction contains all intellectual property including trademarks, know-how, patents and patent applications of FiLaser. The transaction, which is subject to customary closing conditions, is expected to close in March 2014.
Rofin is a developer and manufacturer of laser sources and laser-based solutions while FiLaser USA LLC. specialises in developing and designing singulation processes for brittle materials,
“We are proud that FiLaser selected Rofin to market this technology. With the signing of the Asset Purchase Agreement, we are able to upgrade and complement our comprehensive ultra-short pulse laser offering with a specialised unique technology for the cutting of brittle materials, like glass and sapphire. The commercialization of this technology is an important step for the industry in improving the cutting performance of these materials and subsequently the wider use of laser technology,” says Gunther Braun, President and CEO of Rofin. “We look forward to further developing and applying this technology to a broader range of materials.”
Jeffrey Albelo, CEO and Chairman of FiLaser, commenting on the transaction, says, “Rofin is an ideal technology commercialisation vector, bringing scale, experience and integration prowess to bear on the problems of technology development and dissemination. We believe the nexus of FiLaser innovation and Rofin expertise in systems and lasers to be a winning combination. It enables optimal capture in the broadest market cross-section and greatly improves the adoption profile. We expect great things and we are excited to have our technology become a part of the Rofin technology portfolio.”
Rofin-SINAR Technologies has its operational headquarters in Plymouth, Michigan, and Hamburg, Germany and maintains production facilities in the US, Germany, UK, Sweden, Finland, Switzerland, Singapore, and China.
FiLaser is headquartered in Portland, Oregon.
Physicists discover ‘quantum droplet’ in GaAs
A new quasiparticle by exciting gallium arsenide with an ultrafast red laser initially form excitons
JILA physicists used an ultrafast laser and help from German theorists to discover a new semiconductor quasiparticle - a handful of smaller particles that briefly
March 2014
www.compoundsemiconductor.net 117
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164