news digest ♦ Lasers levels at deep depths while mitigating surface damage.
The laser pulse results in an ultra-fast thermal ramp (1010 K/s) and impurity incorporation through decomposition of chemisorbed gas-phase source species and thermal diffusion of atoms into the crystalline lattice.
Impurity incorporation rate, diffusivity, and activation are all functions of the laser wavelength, power, and pulse time and precursor pressure.
Applicote has built a laser system and processing chamber for high pressure laser doping for rapid processing of substrates and simplification of the device fabrication process.
The technology will also be expanded to carbon doping of silicon wafers to create a surface region of SiC in silicon to accommodate GaN thin film deposition.
The company is also reporting significant progress on several other initiatives on its technical roadmap.
The firm has achieved the MS-5 milestone - the operation of its switching laser within the POET platform. This achievement has implications for on-chip and optical communications applications.
POET says this single demonstration is a big leap forward for an integrated circuit industry looking for ways to push complementary metal-oxide semiconductor (CMOS) processes past some challenging technical barriers.
Peter Copetti, Executive Chairman and interim CEO, notes,“This is the most definitive step yet in our drive to enhance POET’s electronic and optical monolithic capability, beyond CMOS and silicon photonics.”
Copetti adds, “While timeline variations are always to be expected for a company in development mode, our belief in Geoff Taylor and his team has never wavered. We would like to thank the entire technical team for its hard work and dedication.”
Specifically, excellent switching operation was achieved with a laser threshold of 1-mA, just above a thyristor holding current of 0.5-mA, for a 10-micron diameter laser device, exhibiting a suppression ratio of 50 dB.
Prototype Laser Materials Synthesis Apparatus
AppliCote has its corporate headquarters in Lake Mary and the laser processing lab in Mount Dora, both in Florida.
Lasers
POET GaAs based laser reaches a new milestone
The gallium arsenide laser is claimed to take Moore’s law to the next level
POET has achieved continuous-wave (cw) operation of its thyristor laser within its proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated electronic and optical devices on a single semiconductor wafer.
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www.compoundsemiconductor.net March 2014
This enables optical short reach applications found in data-centre,server farms and high performance computing, thereby lowering system solution cost when compared to silicon photonics.
Facility Upgrades
In accordance with its planned maintenance scheduled for the POET facility, the company has completed its most recent wafer growth cycle.
In association with this, POET is upgrading its MBE system to make critical additions and replenish source materials.
One addition is a high-volume indium source to enable metamorphic growth on a GaAs substrate of the POET epitaxy with a wavelength of 1550nm.
This is expected to enable the production of long- wavelength lasers combined with high In-content field- effect transistor (FET) channels for superior high-speed transistor performance.
The company has previously announced that it realized submicron device operation from an initial 800-nm down to 200nm.
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