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developers are exploring for next generation electric vehicles and high-capacity consumer electronics. The properties of the LITX50 conductive additive promo- te both increased conductivity and efficiency in the battery layers at normal and cold temperatures. It also enables a more energy-dense layer coating that increases performance while lowering manufacturing cost.
http://www.cabotcorp.com/batterymaterials C
ambrios Technologies Corporation, a leader in nanotechnology-based solutions to enable the
development of electronic devices with transparent conductors, entered a new strategic phase with the appointment of John LeMoncheck as President and CEO, and a $5 million Series D-3 financing round from Samsung Venture Investment Corporation.
Both announcements advance Cambrios‘ efforts to accelerate product introductions and commer- cial growth in multiple consumer electronic device markets. Dr. Michael R. Knapp, Cambrios‘ founding President and CEO, will become Chairman.
http://www.cambrios.com C arl Zeiss has launched the AURIGA® advantages of the AURIGA® Laser, a
new advanced system combining the specific CrossBeam (FIB-SEM)
workstation with the capabilities of a pulsed micro- focus laser for fast ablation of material.
EA-Leti and III-V lab, a joint lab of Alcatel- Lucent Bell Labs France, Thales Research and
Technology and CEA-Leti, have demonstrated an integrated tuneable transmitter on silicon. For the first time, a tunable laser source has been integrated on silicon, which represents a key milestone towards fully integrated transceivers. The transmitter incor- porates a hybrid III-V/Si laser-fabricated by direct bonding, which exhibits 9nm wavelength tunability and a silicon Mach-Zehnder modulator with high extinction ratio (up to 10 dB), leading to an excellent bit-error-rate performance at 10 Gb/s. The results were obtained in the frame of the European funded project HELIOS, with the contribution of Ghent
University-IMEC for the design of the laser and Uni- versity of Surrey for the design of the modulator.
CEA-Leti and III-V lab also demonstrated single wavelength tunable lasers, with 21mA threshold at 20° C (68° F), 45nm tuning range and side mode suppression ratio larger than 40dB over the tuning range.
“We can overcome this problem by bonding III-V material, necessary for active light sources, onto a silicon wafer and then co-processing the two, thus accomplishing two things at once,” explained Martin Zirngibl, Bell Labs Physical Technologies Research leader.“Traditional CMOS processing is still used in the process, while at the same time we now can inte- grate active light sources directly onto silicon.”
http://www.3-5lab.fr http://www.leti.fr
12-02 :: February/March 2012