10-02 :: February 2010
nanotimes
43
News in Brief
As can be seen in the line scan of Fig. S4C, there is a bump of ~500nm at the P3HT side of the interface
owing to the fabrication process (spinning P3HT film with CYTOP and photo-resist protecting the NTCDI
film). However, even when the bump at the interface varied from one sample to the other, the SKPM
invariably showed a chemical potential difference (CPD) of ~0.2 eV at the interface.
Further, it can also be noted that if the bump at the interface were to dominate the CPD difference at
the junction, the variations in it would not be as pronounced with the application of gate voltage and
drain voltage. © PNAS / Johns Hopkins University