opinion photonics
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Silica-on-silicon has been used as the functions required in an optical transport integration. Here, III-V material is wafer
material of choice for the fabrication of system to be monolithically integrated into bonded (adhesive or molecular) to a
planar waveguide circuits (PLC) which an optical “system-on-a-chip” that can prepared substrate, most commonly SOI,
enable the integration of a large number of provide substantial benefits versus the use and then further processed using modified
passive optical functions. PLCs that of many discrete optical devices. or standard CMOS process technologies. In
integrate more than 100 passive optical this case, the small critical dimension and
functions on a single chip are currently in A strong and growing player for PICs over high optical confinement of SOI may be
routine production. Examples are chips the past few years is monolithic-hybrid combined with the light emitting and
integrating optical couplers, switches,
VOAs, and monitor taps for use in ROADMs
applications, and chips integrating multiple
AWGs for use in wavelength selective
switch (WSS) applications. Excellent
examples of passive PIC products are
shown in Figure 3.
Silicon is an indirect band gap material,
which means that implementing active
opto-electronics functions such as lasing
and light detection will be more complex.
Innovative approaches have included the
use of novel material doping, different poly-
crystalline structures, and/or the need for
external optical pumps. In the meantime, the
relative maturity and ease of manufacture of
this technology for use in implementing
passive optical functions has led to the
GALLIUM NITRIDE
increasing use of silicon-based planar
lightwave circuits (PLC) for integrating “all-
SOLUTION
optical” functions such as ROADMs.
Photonic integrated circuits can also be
FOR MICROWAVE
implemented using III-V materials having a
direct band gap such as InP or GaAs. OR LED DEVICES
These materials inherently support light
emission and detection, and can be used to
FROM 2-INCH TO MULTI 4-INCH WAFERS
integrate lasing, amplification, and detection
functions that are important to implementing
optical-to-electrical-to-optical (OEO)
Innovative Reactors
conversions. For example, GaAs allows the
From research to production
fabrication and integration of active
Flexibility in the nitrogen sources
optoelectronics devices in the 850 nm
RF nitrogen plasma source
telecom window. Clear benefits are the
short-reach optical transmission applications
Ammonia delivery module
including chip-to-chip, computer-to-
Full-Service Process Technology Center (PTC)
computer interconnections, and local area
Acompanies you to start up through growth
networks.
demonstration and wafer characterization
Indium phosphide and its many ternary,
quaternary and penternary alloys have
demonstrated the ability to marry the reliable
integration of both active and passive
To find out more, please contact us today at:
optical devices operating in the 1310 nm or
e-mail: info@riber.com
1550 nm telecom windows. InP supports
www.riber.com
light generation, amplification, modulation,
RIBER - 31, rue Casimir Périer - 95873 Bezons cedex - France
detection, variable attenuation, and
Tel: +33 (0) 1 39 96 65 00 / Fax: +33 (0) 1 39 47 45 62
switching in addition to passive functions
such as wavelength (de-)multiplexing,
<AABI4G<I8FB?HG<BAF9BEF8@<6BA7H6GBE<A7HFGEL
optical routing, and polarization control. This
enables all the main optoelectronics
October 2009 www.compoundsemiconductor.net 29
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