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8-16 News v2 10/9/09 13:24 Page 9
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RFMD anticipates production revenue
RF Micro Devices, has announced the performance whether the handset is overall thermal impact. The RF3280
Company is engaged with two leading operating in WCDMA or LTE. includes an integrated output power
handset manufacturers and two leading detector that supplies a voltage signal
baseband manufacturers in the development The combination of analog bias control and relative to the output power level of the PA,
of fourth generation (4G) Long Term a DC-DC converter also optimizes thereby reducing board area and simplifying
Evolution, or LTE, mobile broadband efficiency, at all power levels, and minimizes implementation.
handsets. Specifically, RFMD is supplying
the RF6276 and the RF3280, both of which
are 4G LTE power amplifiers (PAs)
designed to meet or exceed the data-centric
performance requirements of the 4G LTE
mobile broadband standard. RFMD
anticipates production revenue related to
4G LTE PAs will begin in the second half of
fiscal 2010, ending April 3, 2010.
“These expanding customer engagements
with leading industry partners clearly
demonstrate our commitment to advancing
new technologies and accelerating the wide
scale deployment of next-generation mobile
broadband,” said Eric Creviston, president
of RFMD’s Cellular Products Group (CPG).
“RF Micro Devices has a proven history in
technology leadership and the support of GALLIUM NITRIDE
new air interface standards, including 2G,
2.5G and 3G. Now, with these customer
SOLUTION
engagements, we are pleased to support
the early field deployment of next-generation
4G LTE handsets.”
FOR MICROWAVE
The RF6276 linear LTE power amplifier (PA) OR LED DEVICES
is tuned for operation in LTE bands 12 (698
to 716 MHz) and 13 (777 to 792 MHz) and
FROM 2-INCH TO MULTI 4-INCH WAFERS
delivers a blend of high-power efficiency
and lower current consumption as output
power levels decrease. The RF6276
Innovative Reactors
features two digital power modes that adjust
From research to production
bias current and optimize the PA for the
Flexibility in the nitrogen sources
desired range of output power, while
RF nitrogen plasma source
maintaining the stringent linearity
Ammonia delivery module
requirements of LTE modulation.
Full-Service Process Technology Center (PTC)
RFMD’s RF3280 linear LTE PA is tuned for
Acompanies you to start up through growth
operation in LTE band 7 (2500 to 2570
demonstration and wafer characterization
MHz) and is optimized for use in linear
multimode WCDMA/LTE mobile devices.
The RF3280 leverages RFMD’s proven
quadrature PA technology, which improves
To find out more, please contact us today at:
end-product immunity to VSWR (otherwise
known as “antenna mismatch”) and eases
e-mail: info@riber.com
end-product implementation.
www.riber.com
RIBER - 31, rue Casimir Périer - 95873 Bezons cedex - France
The RF3280 is designed for RF front end
Tel: +33 (0) 1 39 96 65 00 / Fax: +33 (0) 1 39 47 45 62
architectures utilizing analog bias control in
combination with a mated DC-DC
<AABI4G<I8FB?HG<BAF9BEF8@<6BA7H6GBE<A7HFGEL
converter. This architecture enables dynamic
PA loadline adjustments which optimize
September 2009 www.compoundsemiconductor.net 9
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