8-16 News v2 10/9/09 13:24 Page 12
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Breakthrough green laser
OSRAM Opto Semiconductors has Technology Officer at OSRAM Opto
overcome the previous limits of the InGaN Semiconductors, said: “With this
material system. At the pre-development demonstrator we have shown that green
stage, the company succeeded in lasers can be manufactured from indium-
manufacturing the first direct emitting green gallium-nitride. We are therefore on course
laser diode from the InGaN (indium-gallium- to produce compact, cost-effective, high-
nitride) material system with a high optical quality green laser light sources.“ Green
output. The diode emits a “true green”, lasers are used in numerous medical and
which is defined by the spectral range of industrial applications, but also as light
515 to 535 nm. In this range, efficient high- sources in mobile mini-projectors. A direct
quality semiconductor lasers have been emitting green laser can help make these
commercially available only as frequency- projectors even smaller with even better
doubled versions. In the medium term, performance. OSRAM Opto
however, direct emitting green lasers could Semiconductors already offers blue emitting
replace frequency-doubled lasers for InGaN laser diodes for commercial
numerous applications. They are easier to applications.
control, and also offer greater temperature
stability, a smaller form factor and higher German Ministry for Education and
modulation capability at several 100 MHz. Research is sponsoring the MOLAS should one day be available also to users of
research project (until March 2011, FKZ cell phones and cameras. As part of this
Preliminary performance data are 13N9373) which involves technologies for project, OSRAM is developing efficient
impressive. In pulsed mode at room ultra-compact and mobile laser projection laser light sources based on the InGaN
temperature the laboratory prototype has systems. The great advantage of laser material system (indium-gallium-nitride) for
achieved an optical output of 50 mW; the projectors – a consistently sharp, true-color, mobile projection systems. With the first
threshold current density is around high-contrast image irrespective of the direct emitting green laser the company has
9 kA/cm
2
. Dr. Christian Fricke, Chief projection distance and projection surface – achieved an important early objective.
New Navy contract
Raytheon Company was awarded a $7 During phase one, the Raytheon-led team
million follow-on contract from the Office of demonstrated that high performance
Naval Research for work on the Compound compound semiconductor devices (InP
Semiconductor Materials on Silicon HBTs) can be directly grown and fabricated
(COSMOS) program. Funded by the on silicon substrates and monolithically
Defense Advanced Research Projects integrated with Silicon CMOS transistors on
Agency, this phase two contract will focus the same substrate. The team will use these
on improving the yield and integration findings in phase two to design and
density of compound semiconductor and fabricate high speed, low power
silicon complementary metal oxide consumption digital-to- analog
semiconductor (CMOS) transistors converters whose performance cannot be
fabricated on the same silicon wafer. realized with today’s existing semiconductor
technology.
“The COSMOS program focuses on
integrating high-performance compound Using its OpenAIR business model for
semiconductors, such as Indium phosphide assembling talent and capabilities, Raytheon
or Gallium arsenide, with low-cost silicon IDS is partnering with Raytheon Systems
transistors to achieve superior cost benefits Limited, Glenrothes, Scotland; Soitec,
and performance than what is available Bernin, France; Teledyne Scientific Imaging
today,” said Michael Del Checcolo, vice Company, Thousand Oaks, Calif.;
president of Engineering for Raytheon Massachusetts Institute of Technology,
Integrated Defense Systems (IDS). “These Cambridge, Mass.; Paradigm Research
technological advances allow us to provide LLC, Windham, N.H.; IQE, Bethlehem,
more complex and highly sophisticated Penn.; and Silicon Valley Technology Center,
solutions for our warfighters.” San Jose, Calif.
12
www.compoundsemiconductor.net September 2009
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