EXPERIENCE THE POWER OF THE SEMITEC FT ULTRA THIN. ULTRA FAST. Ultra Versatile. MEDICAL 0.15 mm 1.0mm U ULTRA THIN


ULTRA FAST 0.2 sec


ULTRA VERSATILE -50  +350°C


BATTERIES THE SEMITEC FT 0.15mm thin


THE SMALLEST YET MIGHTIEST THERMISTOR IN THE WORLD


Surpassing other SMDs, our Semitec FT can be placed on or closer to the heat source with response times that are 10x faster than conventional SMDs.


SAFETY • GREATER EFFICIENCIES • LIFETIMES MAXIMISED 01606 871680 smart@atcsemitec.co.uk TD3305 FT advert - Electronics Today half page 195mm x 135mm.indd 1 ELECTRONIC SENSORS


Enhancing 


 are essential tools  


T


hese devices operate by emitting infrared  analysing the returned signal. The core components of an OTDR include a laser diode for transmission and an avalanche photodiode (APD) for signal reception.


Key OTDR Components and Functionality


 typically operate at 1310 nm and/or 1550 nm infrared wavelengths. The APD’s sensitivity plays a crucial role in determining the instrument’s range, which can extend beyond 200 km. One challenge in OTDR operation is the presence of dead zones or event blind areas, which can lead to misinterpretation of closely spaced faults.


Indium Gallium Arsenide (InGaAs) APDs


For the 1100 nm to 1700 nm wavelength range,  and dispersion, InGaAs APDs have become the preferred choice over germanium devices. This preference is due to their lower noise and higher detection bandwidth. However, traditional InGaAs APDs are typically limited to a maximum gain between 10 and 40 before   (TIA).


Advancements in APD Technology  has led to the development of a new class of InGaAs APD technology. These “noiseless” 


gains over 100 without signal-to-noise ratio degradation. The key innovation lies in the addition of antimony alloys to the compound semiconductor manufacturing process.


 APDs


The new antimony-enhanced APDs offer  Increased Sensitivity: 12 times higher sensitivity compared to traditional APDs. Higher Gain: Capable of operating with an internal gain exceeding 120. Improved Recovery: Faster overload recovery, minimising dead zone issues. Temperature Stability: Ten times lower temperature drift and improved stability at high temperatures.


atcsemitec.co.uk 24/11/2023 15:14 3D PRINTERS


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