PRODUCTS POWER ELECTRONICS TMD INTRODUCES TWO NEW KA BAND MPMS
provide a higher power. The compact, low weight
PTX8808 and PTX8811 operate in the technically challenging Ka band. TMD’s PTX8808 and PTX8811
employ a Ka band helix, mini– Travelling Wave Tube (TWT) and a matched, high density switched mode power supply to form a single drop-in microwave amplifier unit. The PTX8808 and PTX8811 meet
T
MD Technologies (TMD) has introduced two new products to
its advanced PTX range of Microwave Power Modules (MPMs). The new PTX8808 and PTX8811
operate in the technically challenging Ka band and are designed to meet the exacting needs of today’s Electronic Warfare
(EW) and high-performance radar systems. Replacing the earlier PTX8807, the new MPMs between them cover the extended frequency range of 26.5 to 40GHz, with power outputs of 60 to 160W (CW/pulsed, 100% duty cycle). The PTX8811 employs a narrower bandwidth, allowing it to be optimised to
the demands of today’s high- performance EW and radar systems. This arrangement not only
eliminates potentially hazardous high voltage TWT interconnections but also, by reducing overall system size, simplifies platform integration procedures.
www.tmdus.com
Nexperia is partnering with United Automotive Electronic Systems Co., Ltd. on gallium nitride (GaN) power semiconductor devices. The program will focus on power systems for EVs, with the aim to jointly develop automotive applications using GaN technology. The electrification of cars, the
NEW SYSTEM-ON-MODULE WITH NXP LX2160A PROCESSOR
MicroSys Electronics’ new miriac MPX‑LX2160A System-on-Module (SoM) is optimised for the demanding operating conditions of commercial vehicles and mobile systems. With its 16 Arm Cortex-A72 cores, it provides the technological basis for the significantly greater performance requirements of (AI) edge server applications, autonomous driving, and situational awareness in cobot applications. Offering twice as many cores as its predecessors, the NXP LX2160A is the fastest embedded multi-core processor from NXP on the market today. The module is also optimised for use in functional safety applications. Typical use cases for the NXP LX2160A processor-based miriac SoM from MicroSys Electronics are
primarily found in V2X communications. Examples include edge servers in trains, planes, commercial vehicles, and autonomous mobile systems. Other application areas are industrial data centers in harsh environments – from IIoT networked discrete manufacturing factories with smart collaborative industrial robots to process industries and the energy sector. The range of applications further includes servers for professional mobile broadcasting and critical communications infrastructure, some of which are also mobile. Powerful processor- integrated Ethernet controllers enable high-performance high-end communication in these application areas, with up to 100Gbps Ethernet and integrated 116Gbps Layer 2 Ethernet switching. In addition, the module provides efficient packet offload to process and respond to all received information in parallel: Offering data rates of 100Gbps, the compression/decompression engine is five times faster, while hardware-based encryption has accelerated by 67%. A large choice of PCIe 3.0 interfaces with x8 and x4 lanes allows maximum flexibility with fast data throughput.
http://www.microsys.de
increasing high power requirements of telecommunication equipment for 5G and the rise of Industry 4.0 require power conversion efficiencies for which GaN is expected to become the mainstream technology. These trends underpin the growing demand for power semiconductors in 2021 and beyond. UAES has already started using Nexperia GaN FETs in R&D and collaborative projects including vehicle- mounted chargers and high-voltage DC-to-DC converters for electric cars. Nexperia's GaN technology has
extremely good figures of merit (RDS(on) x QGD) and reverse recovery charge (Qrr) metrics that support high switching frequencies and efficient power conversion. Nexperia produces GaN based on mature and reliable mass production techniques, largely in its own global production facilities, to manufacture products according to automotive AEC-Q101 standards.
www.nexperia.com/gan-fets
GaN PARTNERSHIP
LIDAR DEMONSTRATION BOARD DRIVES LASERS WITH CURRENTS UP TO 220A
Efficient Power Conversion’s (EPC) EPC9150 is a 200V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system. eGaN FETs and integrated circuits provide the high current pulses,
extremely narrow pulse widths, and small size that make affordable, high performance lidar possible. Using the 200V, 12 square mm, EPC2034C eGaN FET, the EPC9150 can generate a 220A laser pulse peak in a pulse width that is only 2.9 nanoseconds wide. The high current increases the range of the lidar system, while the short pulse width leads to higher resolution, and the tiny size and low cost make eGaN FETs and ICs ideal for lidar applications.
www.epc-co.com
26 MARCH 2021 | ELECTRONICS / ELECTRONICS
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