news digest ♦ Lasers
low-risk, comprehensive NGJ solution to the U.S. Navy. Raytheon also leveraged its GaN based AESA technologies to provide warfighters with enhanced electronic attack capabilities.
“Raytheon provided the U.S. Navy with an innovative and efficient design capable of jamming current and future threats,” adds Yuse. “Our technology approach met the program requirements and leveraged our industry team’s extensive experience in combat-proven, high-reliability agile-beam RF systems designed for demanding carrier-based aircraft environments.”
NGJ will replace the ALQ-99 tactical jamming system currently on the Navy’s EA-18G Growler tactical airborne electronic attack aircraft.
Raytheon’s Space and Airborne Systems business, based in McKinney, Texas, will lead the Technology Development phase of the NGJ program with collaboration from Raytheon facilities in El Segundo, California; Forest, Mississippi; Dallas, Texas; Fort Wayne, Indiana; Largo, Florida.; and Andover, Massachusetts.
telecom applications. We even have one of our sensors on NASA’s Mars Curiosity Rover’, say sAlfred Forchel, founder of Nanoplus, “We chose Oxford Instruments systems for their versatility, superior process capabilities and excellent customer support.”
Frazer Anderson, Business Group Director at Oxford Instruments concludes, “Our tools offer the ideal platform for production as well as research & development in many new application areas, and Laser Bar facet coating is just one of these. Our excellent process applications team and global service support ensure that our customers are supported in every respect and can count on their Oxford Instruments systems for maximum uptime and reliability.”
Optimising InGaAs metamorphic buffer for laser
diodes Using Laytec’s EpiCurve TT, NTT has improved it’s thin InGaAs buffer layer to exhibit lower thermal resistance
Lasers
Nanoplus orders Oxford Instruments tool for laser etching
The Ionfab300 Plus will be used for laser bar facet coating with anti-reflective and high-reflection multilayers, and the PlasmaPro System100 RIE system will be used for GaAs and InP compound etching
Oxford Instruments Plasma Technology (OIPT) has just received an order from Nanoplus in Germany for an ion beam deposition and a plasma etch system for use on novel types of semiconductor laser production.
Nanoplus produces semiconductor lasers over several wavelength ranges (some exclusively) for many different customers with a wide range of applications.
The Ionfab300 Plus ion beam deposition is a multi-batch cassette loading tool allowing many devices to be produced for several applications and various customers in one load. The Ionfab300 Plus will be used for laser bar facet coating with anti-reflective and high-reflection multilayers, and the PlasmaPro System100 RIE system will be used for GaAs and InP compound etching.
David Pearson, OIPT’s Senior Ion Beam Technologist, comments, “Our Ionfab optical coating tools are becoming the tools of choice for many types of precision optical coatings worldwide, in particular in laser applications.”
“Nanoplus is an internationally leading supplier of single mode DFB lasers for sensing, metrology, spectroscopy and
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www.compoundsemiconductor.net August/September 2013
Temperature characteristics of laser diodes (LDs) on a GaAs substrate depend on the quality and the thermal resistance of the InGaAs metamorphic buffer layer.
Ryo Nakao from NTT used LayTec‘s in-situ metrology system EpiCurve TT to improve layer thickness and indium content in order to fabricate a thin InGaAs metamorphic buffer with low thermal resistance.
The in-situ tool helps understand the MOCVD growth conditions and shows the changes in wafer curvature caused by residual strain during MOCVD growth.
Fig. 1: In-situ curvature data of InGaAs buffer and quasi- InGaAs substrate on GaAs substrate
Fig. 1 shows in-situ curvature data for a 1250 nm metamorphic InGaAs buffer layer and a quasi-InGaAs substrate layer. The growth can be separated into 3 parts: I - Coherent (pseudomorphic) growth of the buffer, II - Growth with relaxation, III - Free-standing (unstrained) growth.
During relaxation, the in-plane lattice constant of the In0.12Ga0.88As layer increases. After the buffer has reached 1250 nm, its lattice constant exactly matches the lattice
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