LED Technology
device technologies. Following successful demonstration of high-performing GaN- on-Si LED wafers, Toshiba began mass production of its LETERAS family of white LEDs based on this process in 2012.
The first-generation TL1F1 series, introduced in December 2012 in the
of performance, the TL1F1 series has been used successfully in applications such as lamps, ceiling lighting, streetlights and floodlights.
The next generation The second-generation TL1F2 series entered mass production in November
TL1F2 LEDs ranges from 104 lumen to 135 lumen depending on colour temperature and colour rendering index (CRI). The series offers a full CCT range from 2700K to 6500K, with minimum CRI values of 80 and 70 respectively.
The TL1F2 series LEDs can be driven at 350mA typical forward current, and have a low typical forward voltage (VF) of only 2.85V helping designers to reduce system power
consumption. They are supplied in a standard 6450 package measuring 6.4mm x 5.0mm by 1.35mm, and have a broad operating temperature range of -40°C to 100°C allowing use in either indoor or outdoor lighting applications. Figure 4 lists the devices that are or will become available in second- generation technology.
Figure 3: Next-generation GaN on Si white LEDs
6.4mm x 5.0mm 6450 package, had typical efficacy of up to 110 lumens per Watt (lm/W), and offered luminous flux from 112 to 85 lumens with Correlated Colour Temperature (CCT) ranging from 5000K to 3000K. By providing this level
2013, delivering greater efficacy of up to 135lm/W (typical). The improvements have been achieved through a combination of optimised packaging and increased optical output power from the LED chip. Typical luminous flux of 1-Watt
Figure 4: Second generation Toshiba GaN-on-Si white LEDs (all test conditions at specified current and 25°C)
savings, while additional devices such as LED control and driver ICs may be consolidated within the package to improve system performance and reliability.
The future for GaN-on-Silicon The successful commercialisation of GaN-on-Si LEDs opens the door to further advances in the future. Processes and equipment for wafer sizes greater than 200mm are already established, providing opportunities for further cost
Toshiba Electronics Europe |
www.toshiba-components.com
Matthias Diephaus is the Senior Manager for Opto Semiconductors at Toshiba Electronics Europe
www.cieonline.co.uk
Components in Electronics
February 2014 39
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