materials  ALD films


Table 2,the process data of Pt films on the surface of Si,SiO2,Al2O3and HfO2deposited at 300o plasma ALD using MeCpPtMe3 and O2 gas or O2plasma (500 cycles)


C by thermal and remote


homogeneous and resulted in a low resistivity of 12.8 µΩ-cm.


AES studies revealed high quality Pt films deposited by both thermal and plasma ALD with carbon impurity less than 1.5% and oxygen found only in the interface. SEM and EDX investigations of Pt nucleation and growth in ALD processes showed that the plasma ALD can form bigger size Pt particles in the early stage and reduce the


nucleation delay. Pt on HfO2 has shown the highest growth rate and the lowest resistivity of the oxides. It


is believed that surface functionalisation by plasma-ALD and rich-absorbed oxygen radicals on


HfO2 surface are the reasons. In the O2 plasma, O radicals are created, leading to three effects on the Pt-growth by reducing the nucleation delay: 1) providing active atomic O to the surface; 2) increasing oxidation with the ligands of the chemisorbed precursor on the surface; and 3) increasing Pt nucleation by extra plasma energy.


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