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materials  ALD films


Figure 6,resistivity of platinum film on various oxides by plasma-ALD at 300o


C vs precursor


dose-time.It is clear that the order of resistivity of Pt film grown on oxides is Si/SiO2> Si/Al2O3> Si/HfO2


grown on Si by plasma ALD is bigger than that of thermal ALD at same cycle numbers.


Table 2 gives a short summary of Pt particle-size at 50 and 100 cycles, respectively, and the process


data of Pt films on the surface of Si, SiO2, Al2O3 and HfO2 deposited at 300°C by thermal and remote plasma ALD for 500 cycles. The growth rate and


resistivity of Pt plasma-ALD layers on various oxides is shown in Figure 9.


HfO2 shows the highest growth rate and the lowest resistivity of them. It is believed that surface


functionalisation by plasma-ALD and rich-absorbed oxygen radicals on HfO2 surface are the reasons.


From Fig.3 and Fig.5 we have found that the Pt films deposited on Si (100) substrates showed a Pt nucleation delay of 70 cycles and 20 cycles grown by thermal ALD and plasma-ALD before the Pt ALD process goes to a linear growth. Table 2 shows Pt particles increase in size with the number of Pt ALD cycles performed and it is also clear that the Pt particles grown by plasma-ALD are bigger than those by thermal ALD. It is believed that surface functionalisation by plasma-ALD plays a important


role to shorten the nucleation delay. In the O2 plasma, O radicals are created, leading to three effects on the Pt growth by reducing the nucleation delay:


1) providing active atomic O to the surface;


Figure 7,AES of 30nm Pt film grown by plasma-ALD


Left: Ex-situ M2000 ellipsometer with motorized X-Y mapping stage at Oxford Instruments Right: the M2000 ellipsometer mounted in-situ on the FlexAL tool in OIPT’s laboratory


Issue III 2012 www.siliconsemiconductor.net 17


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