RF electronics ♦ industry news
RFMD to Support Samsung’s GALAXY Tab Android Tablet
RFMD is supplying Samsung with three highly integrated WiFi components which combine small footprint with superior performance.
RF Micro Devices, a global provider of high- performance radio frequency components and compound semiconductor technologies, says that Samsung has selected three of its highly integrated components to deliver superior WiFi connectivity in the recently-introduced GALAXY Tab Android tablet.
Specifically, RFMD is supplying Samsung with the RF5521 front end module (FEM) for the low-band 2.4 GHz frequency, and the RF5515 low noise amplifier (LNA) and RF5355 power amplifier (PA) for the high-band 5.0 GHz frequency. Volume shipments have begun, and RFMD anticipates increasing WiFi shipments to Samsung -- in mobile tablet devices as well as in smartphones -- as single-band and dual-band design wins ramp into volume production.
With 3G connectivity, Wi-Fi, and Bluetooth 3.0, the Samsung GALAXY Tab takes mobile communication to a whole new level. By combining Samsung innovation with the Android OS 2.2, the Tab is an always on communication and entertainment tool.
Its large battery (4,000 mAh) provides more than 7 hours of movie viewing time and because it’s powered by a Cortex A8 1.0GHz application processor, it’s designed to deliver high performance.
The RF5521 FEM, RF5515 LNA and RF5355 PA are on a leading WiFi reference design and were selected primarily due their combination of performance, integration and small footprint size. The RF5521 FEM combines a low noise amplifier (LNA) with bypass and a single pole three throw (SP3T) switch. The RF5515 and RF5355 operate in tandem to provide a 5GHz RF front end solution that exceeds competitive performance and price levels while it delivers extended range capability. Each of the components is targeted at high- performance mobile applications using WiFi and Bluetooth(R) combination systems.
Bob Van Buskirk, president of RFMD’s Multi-Market 92
www.compoundsemiconductor.net November/December 2010
Products Group (MPG), said, “We are delighted to support the Samsung GALAXY Tab, and we look forward to growing our WiFi business with Samsung across both smartphones and mobile tablet devices. As we drive to extend our product leadership in a wide range of RF components, our customers can rely on RFMD’s ability to deliver highly integrated solutions that provide superior performance in a reduced-size footprint, significantly enhancing the end user’s wireless connectivity experience.”
The mobile embedded WiFi market is growing at a rapid pace, and dual-band WiFi (2.5GHz/5GHz) is in the early stages of adoption in the expanding market for mobile internet devices (MIDs). RFMD offers a broad portfolio of low-band, high-band, and dual-band components, and the Company expects its mobile WiFi product portfolio to contribute meaningfully to MPG’s anticipated revenue growth.
RFHIC Introduces Wide Range 8W, TETRA GaN Hybrid Amplifier
The 100~960 MHz GaN amplifier has an efficiency of between 50 and 70%. RFHIC says high production yields are guaranteed within the SMD type package.
A new class-C GaN (Gallium Nitride) hybrid amplifier using GaN-on-SiC (Gallium Nitride on Silicon carbide substrate) devices has recently been released by RFHIC. The amplifier gives VHF at 8 W in the 130~450 MHz range, an efficiency of 60%, and UHF at 6 W in the 450~960 MHz range, an efficiency of 50%.
Input and output matching circuits are included in the design with bias circuits and other matching circuits. Physical size of the amplifier is 15 mm x 10 mm x 5.4 mm and is an SMD (surface mount device) type hybrid GaN amplifier. Input voltage is 24 V~34 V and uses ceramic substrate over copper heat slug.
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