industry news ♦ RF electronics
TriQuint Make a Mint with NRL Contract to Develop GaAs MMICs
The $2 million dollar award from the U.S. Naval Research Laboratory (NRL) will be used to create new high-performance S-band low noise amplifiers (LNAs) and high performance amplifiers (HPAs).
TriQuint Semiconductor, a leading RF products manufacturer and foundry services provider, has received a $2 million contract from the U.S. Naval Research Laboratory (NRL) to develop S-band amplifiers with new benchmarks for noise floor, linearity and efficiency performance.
TriQuint was awarded the contract based on its expertise developing new semiconductor processes and products with GaAs and other technologies. The NRL monolithic microwave integrated circuit (MMIC) contract will focus on low noise amplifiers and high power amplifiers (LNAs / HPAs).
“We’re pleased the U.S. Navy has chosen TriQuint again for another program that takes advantage of our leadership in both process development and the design of efficient, high-power microelectronics. It’s exciting to explore another opportunity with the NRL that advances the state of the art,” said Tony Balistreri, TriQuint Marketing Director.
TriQuint’s expertise in gallium arsenide / high- voltage GaAs pHEMT, gallium nitride (GaN), surface acoustic and bulk acoustic wave (SAW / BAW) devices, MMICs and low-cost packaged products has made it a leading supplier of RF system components to Boeing Company, Lockheed Martin Corporation, Northrop Grumman, Raytheon and other major defense contractors.
TriQuint supplies RF innovation for consumer retail products including mobile devices, wireless LAN, triple-play CATV systems, optical and wireless infrastructure applications.
RF Micro Devices(R) Awarded $1.5 Million Navy Contract for GaN RF Power Technology
RF Micro Devices , a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials, device fabrication and high power circuits.
The $1.5 million R&D contract award expands RFMD’s contract backlog over the next six quarters to approximately $5 million. Since calendar 2004, RFMD has been awarded over $14.5 million in R&D contracts by the U.S. Government for development of its GaN high power RF technology. Jeff Shealy, VP and general manager of RFMD’s Defense and Power business unit, said, “GaN technology offers unprecedented performance advantages to advanced military applications, including radar, mobile communication and electronic warfare (EW) systems. Our partnership with ONR is mutually beneficial, and we are very enthusiastic about our shared mission to deploy GaN technology broadly across multiple high performance RF power applications.” Bob Bruggeworth, president and CEO of RFMD, said, “RFMD is leveraging the world’s largest compound semiconductor wafer fab and captive assembly and test facilities to deliver an industry-leading supply chain for the design, packaging and test of GaN high power devices. Importantly, we utilize our scale manufacturing assets used to manufacture and ship approximately three million RF components per day, enhancing our competitive position in the high power amplifier (HPA) marketplace and increasing our ability to improve upon RFMD’s return on invested capital (ROIC).” In addition to military systems, RFMD’s GaN RF power technology delivers enhanced performance to a growing number of commercial power amplifier applications, including private mobile radio (PMR), 3G/LTE wireless infrastructure and CATV transmission networks.
November/December 2010
www.compoundsemiconductor.net 91
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