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Figure 1 shows the new generation of Aquarius- series chips with higher efficacy and lower forward voltage as compared to the previously announced AX14. The chip has a horizontal structure and is designed to satisfy chip-on-board packages for lighting applications which require multiple chips in series on nonconductive substrates.


Epistar says this world-leading performance promises to make these small chips a preferred choice for outdoor display, and RGB BLU applications. Furthermore, this advance should allow exceptional warm white LED solutions with higher efficacy and a better color rendering index to be provided via color mixing than can be achieved through conventional conversion of blue LEDs with phosphors.


So far, this new generation of Aquarius-series AlGaInP LED has been primarily demonstrated in Epistar Labs, but plans are already in motion to transfer the technology to Epistar’s product line.


Epistar Labs will continue to develop higher efficacy of its AlGaInP LEDs enabling lighting solutions with both high CRI and high efficacy warm white light for lighting applications as well as high performance in RGB BLU.


Tongfang selects AIXTRON MOCVD systems


AIXTRON AG today announced a new order for two AIX 2800G4 HT 42x2-inch configuration deposition systems from Tongfang.


The PR China based company placed the order during the first quarter of 2010 and after delivery in the third quarter of 2010, they will be used for GaN ultra-high brightness (UHB) blue LED production. The local AIXTRON support team will be responsible for the installation and commissioning of the new reactors at the dedicated Tongfang production plant. Prof. Liu Gang, General Manager of Tongfang Opto, comments, “Our company is seeking to carry out a major production capacity increase for our high-brightness blue gallium nitride LED devices. The AIXTRON AIX 2800G4 HT system is a perfect match for these requirements. Through our close relationship with AIXTRON we have built up great confidence not only in the quality


and performance of their equipment but also in their support and service.” www.aixtron.com


Industry news Telecoms


CEA-Leti Creates Record- Breaking HgCdTe Array


Designed for defense and security applications, the infrared (IR) imaging array achieves sensitivity close to one-thousandth of a degree Kelvin.


CEA-Leti has revealed what it claims is the first infrared imaging array in the 8-10µm band capable of returning an image with a record-breaking minimum temperature difference.


With a thermal resolution, of 1 to 2mK at ambient temperature and with traditional image cadences of 25-50 Hz, Leti also created an infrared detection array by linking an innovative reading circuit, manufactured using CMOS-silicon technology, to an array of HgCdTe infrared (IR) detectors.


Designed for defense and security applications, the HgCdTe array has a format of 320 x 256 and a pitch of 25µm. The array achieved ultimate sensitivity of close to one-thousandth of a degree Kelvin at an operating temperature of 77K. It represents 10-20x increase in sensitivity compared with what is normally possible under the same observation conditions with conventional components.


To obtain this extremely high sensitivity, CEA-Leti designed and produced a special silicon reading circuit with a 0.18µm CMOS die, involving an analog-to-digital conversion at each elementary detection point with a pitch of 25µm.


The analogue-to-digital conversion is based on the counting of charge packets given off by the detector. An equivalent stored charge of 3 giga- electrons can be obtained. This reading circuit, which is noise-optimized, thus makes it possible to


November/December 2010 www.compoundsemiconductor.net 81


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