review news SiGe BiCMOS technology
PLESSEY SEMICONDUCTORS has commenced the development of a 0.35 micron silicon germanium (SiGe) BiCMOS process technology on its 8-inch line at its Plymouth, England semiconductor manufacturing facility. As part of its strategy of developing its three core product lines of sensors, RF components and power
GaAs & GaN based Amps to Overshoot Silicon
STRATEGY ANALYTICS predicts that the GaAs and GaN based MMIC and hybrid amplifier market is estimated to reach $227 million in 2014. The global conversion from analog to digital broadcasting standards, which increases consumer demand for bandwidth, intensive applications and new services is driving strong growth in CATV.
The recently published Strategy Analytics GaAs and Compound Semiconductor (GaAs) data model, “CATV Infrastructure Amplifier Forecast 2009-2014,” projects a 10% CAAGR from 2009 to 2014 for the hybrid and MMIC amplifiers used in CATV infrastructure.
This analysis shows a shift away from Silicon to GaAs and GaN-based amplifiers. Strategy Analytics projects GaAs hybrid and MMIC amplifiers to grow at a CAAGR of 21%, more than twice the market , to reach slightly more than $160 million in 2014.
GaN hybrid amplifiers will enter the market in 2010 and grow strongly to reach nearly $18 million by 2014. During this same time, Strategy Analytics forecasts that Silicon MMIC and hybrid amplifiers will decline with a negative CAAGR of 9% falling to $49 million in 2014.
“CATV network infrastructure is no longer just television. It is central to the “triple-play” of voice, video and data,” noted Eric Higham, Director of the Strategy Analytics GaAs Service. “As consumers adopt new bandwidth-intensive services, networks become more sophisticated to keep pace. This will encourage strong growth and attractive opportunities for amplifier suppliers in the industry.”
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management devices it was decided that a bespoke SiGe BiCMOS process was required.
The products manufactured on this process will take advantage of having a 70GHz, 2.5V breakdown voltage architecture together with a 40GHz 5V breakdown
voltage architecture on the same substrate. Peter Osborne, Chief Technologist, said, “We have looked at SiGe bipolar and BiCMOS process technologies for some time and have developed processes for other fabs. We believe that our exceptional complementary bipolar processes on SiGe together with our 0.35 CMOS capability should provide a compelling platform from which Plessey can develop outstanding product lines.”
November / December 2010
www.compoundsemiconductor.net 7
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