news review
Has gallium nitride found a way into the smart grid?
RESEARCHERS from the University of North Carolina, led by Jay Narayan have integrated gallium nitride with silicon as a material for electric grids. In light of this, the University of North Carolina is researching how to balance an increased energy demand with a more efficient means of delivery through “smart” grids.
The smart grid is a recent development in electrical engineering, which increases current distribution efficiency compared to traditional electric grids. However, with new technology comes the need for new material. Jay Narayan and John C. Fan have led a team of researchers for the past decade into the process of developing a way to “integrate” gallium nitride (GaN) onto silicon chips for the use of smart grids and other technologies.
Although storage capacity is limited, there is a large response on the industry’s side to confront the problem. ABB, a multinational power technology company, has been looking into ways to improve storage technology. Despite being the leading company in the world for power technology, ABB has set up an outpost on Centennial Campus to research and enhance the present grid.
“You need the storage in order to charge up batteries when you can produce the energy,
so you can use the stored energy when it’s not sunny, if you’re using solar energy as an example,” Le Tang, the VP and Head of the U.S. Corporate Research Center for ABB, said. “We are working on the interface of the renewable sources with the power grid. They don’t naturally go together.”
Narayan’s goal is to be able to apply his new discoveries to the industry, especially for the “smart grid.” He has been working closely with technology companies like ABB, Cree and Kopin to develop the connections necessary to make an impact with his new discoveries. Nevertheless, Narayan’s focus is not limited to smart grids. He is first and foremost a materials scientist, so his main concern was to figure out a way to “marry” GaN to silicon.
Besides its use in smart grids, GaN can be used in various sorts of electronics, including LED lighting and high frequency communications for the military. The potential for savings is so great that the government has invested a plethora of resources into the research. Narayan has received much of his funding from the National Science Foundation (NSF), which has been an important contributor to smart grid research. The NSF has poured an additional $18.5 million into the FREEDM Center on Centennial Campus, which is the centre for the smart grid research.
Dow breaks ground in Korea
DOW ELECTRONIC MATERIALS, a business unit of The Dow Chemical Company has announced plans to build a new metalorganic precursor manufacturing plant in Cheonan, Korea. The construction of Dow Electronic Materials’ new Korea plant is part of a multi-phase plan announced in June 2010 to expand TrimethylGallium (TMG) production capacity to meet the surging global demand for the material in the LED and related electronics markets.
The facility is expected to be operational in early 2011. Capacity expansion in the United States at existing facilities is also progressing as planned, with new capacity expected by the end of 2010 and continuing
through the first quarter of 2011. Total additional capacity resulting from the multi- phase plan is expected to be 60 metric tons per year.
“Meeting our customers’ near-and long-term needs for high-quality materials continues to be a priority for us,” said Joe Reiser, global business director, Metalorganic Technologies, Dow Electronic Materials.
TMG is a metalorganic chemical vapor deposition (MOCVD) precursor material that is critical to the manufacture of LEDs and other compound semiconductor devices. Exceptionally high-quality materials and precise delivery of metalorganic precursors are essential to building reliable LEDs.
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www.compoundsemiconductor.net November / December 2010
TriQuint was awarded the contract based on its expertise with GaAs and other technologies. The NRL (MMIC) contract will focus on low noise amplifiers and high power amplifiers (LNAs / HPAs).
“We’re pleased the U.S. Navy has chosen TriQuint again for another program. It’s exciting to explore another opportunity with the NRL that advances the state of the art,” said Tony Balistreri, TriQuint Marketing Director.
TriQuint receive NRL contract for GaAs MMICs
TriQuint Semiconductor, a RF products manufacturer and foundry services provider, has received a $2 million contract from the U.S. Naval Research Laboratory (NRL) to develop S-band amplifiers with new benchmarks for noise floor, linearity and efficiency performance.
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