This page contains a Flash digital edition of a book.
Power electronics ♦ product news


high performance applications in the defense, communications, and industrial & scientific markets, has developed a new generation of power transistor platform technology. The technology hopes to meet the growing demand for wideband, high power and robust RF power amplifiers. The new generation platform is specifically designed to meet the stringent performance requirements of military communications, jammers and radars. The primary benefit of products based on this platform is very low thermal resistance, which results in higher output power and efficiency in broadband applications combined with improved ruggedness.


GeneSiC Releases Multi-kHz SiC Thyristors in US


The ultra-high voltage Silicon Carbide (SiC) thyristors for use in power electronics for Smart Grid applications are targeted at US researchers.


GeneSiC Semiconductor has unveiled a family of 6.5kV SCR-mode Silicon Carbide thyristors for use in power electronics for Smart Grid applications.


Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (SiC) power devices were not openly available to US researchers to fully exploit the well-known advantages– namely 2-10kHz operating frequencies at 5-15kV ratings – of SiC-based power devices.” commented Ranbir Singh, President of GeneSiC.


“GeneSiC has recently completed delivery of many 6.5kV/40A, 6.5kV/60A and 6.5kV/80A thyristors to multiple customers conducting research in renewable energy, Army and Naval power system applications. SiC devices with these ratings are now being offered more widely.”


Silicon Carbide based thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation as compared to conventional Silicon-based thyristors. Targeted applications research opportunities for these devices include general purpose medium voltage


212 www.compoundsemiconductor.net November/December 2010


power conversion (MVDC), Grid-tied solar inverters, wind power inverters, pulsed power, weapon systems, ignition control, and trigger control.


It is now well established that ultra-high voltage (>10kV) Silicon Carbide (SiC) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault- Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators.


GeneSiC also points out that SiC based thyristors offer the best chance of early adoption due to their similarities to conventional power grid elements. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power.


Singh continues “It is anticipated that large- scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC thyristors. These first generation SiC thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC thyristors. “


“We intend to release future generations of SiC thyristors optimized for Gate-controlled Turn Off capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures,” Singh concludes.


Located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor is a leading innovator in high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of thyristor based devices.


GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, Navy, Army, DARPA, and the Department of Homeland Security. The company is currently experiencing substantial growth, and hiring


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233  |  Page 234  |  Page 235  |  Page 236  |  Page 237  |  Page 238  |  Page 239  |  Page 240  |  Page 241  |  Page 242  |  Page 243  |  Page 244  |  Page 245  |  Page 246  |  Page 247  |  Page 248  |  Page 249  |  Page 250  |  Page 251  |  Page 252  |  Page 253  |  Page 254  |  Page 255  |  Page 256