RF electronics ♦ product news
in the first calendar quarter of 2011, significantly expanding the GaN power transistor options available to RFMD’s customers.
RFMD’s GaN unmatched power transistors support “green” architectures that reduce energy consumption, improve thermal management and optimize network efficiency for network operators. The RF3932 operates over a broad frequency range (DC to 3GHz) and delivers high peak efficiency of >65%.
Additionally, the RF3932 incorporates simple, optimized matching networks external to the package, providing wideband gain and power performance advantages in a single amplifier. The RF3932 is packaged in a hermetic, flanged ceramic two-leaded package that leverages RFMD’s advanced heat sink and power dissipation technologies to deliver excellent thermal stability and conductivity. The 75-watt RF3932 and the 140-watt RF3934 are optimal for both driver and/ or output stages, depending on overall power requirements.
Bob Van Buskirk, President of RFMD’s Multi- Market Products Group (MPG), said, “RFMD is very pleased to expand our GaN-based product portfolio, offering industry-leading power performance in support of diverse end markets. RFMD’s GaN product portfolio clearly demonstrates our commitment to technology and product leadership, and we look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability and ‘green’ power consumption advantages.”
RFMD’s 48-volt, high power-density GaN semiconductor process features high RF power density and efficiency, low capacitance, and high thermal conductivity. This unique combination of features enables the development of compact and efficient high power amplifiers (HPAs) for a broad range of applications, including private mobile radio (PMR), 3G/4G wireless infrastructure, ISM (industrial scientific & medical), military and civilian radar and CATV transmission networks
The RF3932 is currently available for sampling and mass production.
RF Micro Devices is a global leader in the 194
www.compoundsemiconductor.net November/December 2010
design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/ broadband and aerospace and defense markets.
RFMD Unveils Portfolio of Broadband 6-Bit Attenuators
The RFSA2614 and RFSA2624 modules target high-performance wireless applications, including 3G/4G/LTE Cellular infrastructure, wireless backhaul and WiMAX.
RF Micro Devices has launched its broadband 6-bit digital step attenuator product portfolio, with its RFSA2614 and RFSA2624 modules.
RFMD’s newest high-performance components are optimized for operation across multiple market segments, including 3G/4G/LTE cellular infrastructure, WiMAX, wireless backhaul and other high-performance wireless communications applications.
The RFSA2614 and RFSA2624 digital step attenuators (DSAs) feature a 6-bit design with both serial or parallel mode programming, covering a broad frequency range from 50MHz to 4000MHz. Radio designers can use RFMD’s DSAs to adjust the gain of high linearity receive and transmit channels over a 31.5dB range with 0.5dB step resolution.
The new DSAs deliver industry-leading performance, highlighted by superior settling time of 200ns, as well as a P1dB (1 dB compression point) of 27dBm and a IIP3 (3rd-order intercept point) of +48dBm.
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