product news ♦ RF electronics
driving development of ZigBee wireless technology. The Alliance promotes world-wide adoption of ZigBee as the leading wirelessly networked, sensing and control standard for use in consumer electronic, energy, home, commercial and industrial areas.
RF Micro Devices is a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/ broadband and aerospace and defense markets.
RFMD Unveils GaAs IF Mixers for Wireless Applications
The firm’s latest products are targeted at applications include cellular infrastructure, wireless backhaul and other high-performance wireless systems.
RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, has expanded the Company’s RF component catalog to include two new high linearity differential IF mixers: the RFMX0015 and RFMX1015.
Both new products are optimized for operation across a broad range of end markets, including cellular infrastructure, wireless backhaul and other high-performance wireless systems. The increasing deployment of 3G and LTE wireless systems is spurring demand for very high linearity (IIP3> 28dBm) down-converters.
RFMD’s RFMX0015 and RFMX1015 feature an innovative passive GaAs mixer core that delivers high linearity. When combined with the GaAs HBT IF amplifier the combination provides an industry-leading IIP3/DC current figure of merit (29dBm/200mA) for a down-conversion differential IF mixer with 7dB gain and 0dBm LO drive.
The RFMX0015 and RFMX1015 operate in the standard cellular bands between 600 to 1050MHz and 1500 to 2200MHz respectively and support both high and low-side LO injection for IF frequencies up to 300MHz. In addition, the mixers feature an IF bias pin that enables users to reduce the DC current to save power when peak linearity performance is not required.
Samples and production quantities are available now through RFMD’s online store or through local RFMD sales channels.
RF Micro Devices is a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/ broadband and aerospace and defense markets.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD.
RFMD Expands Family of GaN “Unmatched” Power Transistors
RFMD says its GaN high-efficiency RF3932 power transistor delivers superior performance over GaAs and silicon technologies.
RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.
The release of the RF3932 follows the recent release of the 140-watt RF3934, which is the highest output power device in RFMD’s UPT family. RFMD plans to release a third GaN UPT device
November/December 2010
www.compoundsemiconductor.net 193
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