Power Electronics ♦ industry news
Narayan, the John C. Fan Distinguished Chair Professor of Materials Science and Engineering and co-holder of the patent.
“GaN can handle more power than conventional transistors. And it can do so faster, because it can be made into single crystals that are integrated into a silicon chip – so electrons can move more quickly,” Narayan says.
“This integration of GaN on the silicon platform without any buffer layers has enabled the creation of multifunctional smart sensors, high-electron mobility transistors, high-power devices, and high- voltage switches for smart grids which impact our energy and environmental future,” Narayan explains.
Integrating GaN into silicon chips also makes a broader range of radio frequencies available, which will enable the development of advanced communication technologies. “These devices stand to meet the challenges of high-power, high- frequency and high bandwidth needs for advanced consumer applications and military satellite communications,” Narayan continues.
“The United States still leads the world in innovation,” Narayan says. “But with the advent of the internet and instant communication, just doing innovative research isn’t enough anymore. We have to take steps to ensure that our advantage in innovation can be translated into products that create jobs here at home.”
“Direct integration of devices based on different types of semiconductors onto silicon chips is of considerable interest because it can enable different functionalities, such as lasers or higher performance transistors,” says Pradeep Fulay of the National Science Foundation (NSF), which funded the GaN research at NC State.
“Professor Narayan has used a special process that allows integration of semiconducting materials like GaN on the silicon so as to create hybrid type computer chips. This research will likely lead to transistors with far superior power and performance sought for many commercial and military communication applications,” he concludes.
The research that led to the GaN breakthrough was done by Narayan and former NC State Ph.D.
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www.compoundsemiconductor.net November/December 2010
student Thomas Rawdanowicz and published in Applied Physics Letters and U.S. Patent No. 7,803,717, granted Sept. 28. NSF is currently funding additional research in this area by Narayan.
A U.S.-based corporation is already in the process of licensing the technology.
Kyma Acquires Select Assets and IP Rights from Fox Group
Kyma Technologies, Inc., a supplier of ultra- high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is pleased to announce that Kyma has acquired from The Fox Group certain assets and intellectual property rights.
The Fox Group is a privately-held US corporation with a portfolio of proprietary intellectual property (IP) relating to growth of compound semiconductor crystals and crystal layers. Kyma and Fox have been in discussions over such a possible deal for the past two years.
The assets and IP rights acquired by Kyma pertain to nitride semiconductor hydride vapor phase epitaxy (HVPE) and light emitting semiconductor materials and devices.
Kyma expects the acquired resources to accelerate Kyma’s advances in materials and processes, in both contract R&D and product development.
“Working with Fox CEO Barney O’Meara on this has been a great experience,” stated Kyma president and CEO Dr. Keith Evans. “We believe this deal adds significantly to our ability to improve certain products and to develop new products which will become important for several electronic and optoelectronic device applications.”
“Fox engineers were able to produce certain (Al,Ga) N structures and certain p and n doped layers that are of immediate interest to both our current HVPE products and our new product development plans,” added Dr. Edward Preble, Kyma CTO and Vice President of Business Development.
“Fox Group is very pleased that our key equipment,
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