Power Electronics ♦ industry news
energy-efficient devices,” said project coordinator Salvatore Coffa, Group VP and R&D General Manager, Industrial and Multisegment Sector, STMicroelectronics.
He continued, “This key project, which targets secure strategic independence in the emerging field of SiC and GaN technologies, will place Europe at the forefront of energy-efficient devices.”
The overall objective of the project is to develop a cost-effective and reliable integration of advanced SiC and GaN semiconductors in the European power microelectronics industry.
The first priority is for the firm to achieve growth of large area (150mm) SiC and high quality heteroepitaxial GaN on 150mm Si wafers, beyond the current worldwide state-of-the-art for substrates, epitaxy and surface preparation.
The next is to develop new dedicated equipment for material growth, characterization and processing of reliable and efficient SiC and GaN devices on 150mm wafers.
Another aim is to demonstrate high-performance devices with properties that cannot be obtained on Si, including a 1200V/100A SiC MOSFET, SiC JFET capable of operating up to 250 degrees C, and GaN HEMT devices for power switching; this should enable the development advanced packages for high-temperatures devices and improve device reliability.
The partners in the LAST POWER consortium are:
STMicroelectronics S.r.l. (Italy) – project coordinator LPE S.p.A. (Italy)
Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (Italy) Epitaxial Technology Center S.r.l. (Italy) Foundation for Research & Technology-Hellas (Greece) NOVASiC S.A. (France)
Consorzio Catania Ricerche (Italy) Institute of High Pressure Physics UNIPRESS (Poland)
Universita della Calabria (Italy) SiCrystal AG (Germany) SEPS Technologies AB (Sweden) SenSiC AB (Sweden)
146
www.compoundsemiconductor.net November/December 2010
This report provides a complete analysis of the GaN device and substrate industry in the power electronics field along with key market metrics. It
Acreo AB (Sweden) Aristotle University of Thessaloniki (Greece)
GaN Power Device Market to Hit $350M in 2015
The latest report from Yole Développement “GaN Technologies for Power Electronics Applications: Industry and Market Status & Forecasts” says the Total Accessible Market is $16.6b and is envisioned to be split into Power ICs, Power Discretes and Power Modules.
Yole Développement has released its new markets & technological study dedicated to Power GaN
industry.GaN is an already well implanted semiconductor technology and widely diffused in the LED optoelectronics industry.
For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications.
Compared to Silicon, GaN exhibits largely better figures for most of the key specifications in terms of electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of breakdown voltage, switching frequency and overall systems efficiency.
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186 |
Page 187 |
Page 188 |
Page 189 |
Page 190 |
Page 191 |
Page 192 |
Page 193 |
Page 194 |
Page 195 |
Page 196 |
Page 197 |
Page 198 |
Page 199 |
Page 200 |
Page 201 |
Page 202 |
Page 203 |
Page 204 |
Page 205 |
Page 206 |
Page 207 |
Page 208 |
Page 209 |
Page 210 |
Page 211 |
Page 212 |
Page 213 |
Page 214 |
Page 215 |
Page 216 |
Page 217 |
Page 218 |
Page 219 |
Page 220 |
Page 221 |
Page 222 |
Page 223 |
Page 224 |
Page 225 |
Page 226 |
Page 227 |
Page 228 |
Page 229 |
Page 230 |
Page 231 |
Page 232 |
Page 233 |
Page 234 |
Page 235 |
Page 236 |
Page 237 |
Page 238 |
Page 239 |
Page 240 |
Page 241 |
Page 242 |
Page 243 |
Page 244 |
Page 245 |
Page 246 |
Page 247 |
Page 248 |
Page 249 |
Page 250 |
Page 251 |
Page 252 |
Page 253 |
Page 254 |
Page 255 |
Page 256