industry news ♦ Power Electronics
step forward toward next-generation networking and pave the way for new services, such as high-speed services linking multiple cloud networks and ultra- high-definition videoconferencing.
Large-scale optical-waveguide switches operate multiple optical switching elements simultaneously. The heat that this generates can degrade device performance, which necessitates the lowest possible power consumption for each optical switching element.
With optical switching elements, the application of an electrical current to the refractive-index modulator causes electrons to accumulate in fine waveguides, which modulates the refractive index and switches the output port (Figure 2). With conventional optical switching elements made using fine-patterned Si, the electron- accumulation efficiency in fine Si waveguides is low, necessitating more current to achieve sufficient electron-accumulation, thereby increasing power consumption.
The company will proceed with development of large-scale integration technology and integration technology for control electronic circuits, for the realization of large-scale optical switches to enable next-generation networks.
“LAST POWER” Project Aims to Develop GaN-on-Si
The overall objective of the project is to develop a cost-effective and reliable integration of advanced SiC and GaN semiconductors in the European power microelectronics industry.
The partners in a new publicly-funded European research project have announced details of the multinational/multidisciplinary program called The LAST POWER (‘Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications).
The aim of this important 42-month ENIAC (European Nanoelectronics Initiative Advisory Council) project is to provide Europe with strategic independence in the field of wide band gap (WBG) semiconductors. This field is of major strategic importance as it involves the development of highly energy-efficient systems for all applications that need power, from telecommunications to automotive, from consumer electronics to electrical household appliances, and from industrial applications to home automation.
Fujitsu’s optical switching element uses fine- patterned SiGe in the refractive-index modulator (Figure 3). Forming fine-patterned SiGe, which has a narrower band-gap than Si, on top of Si allows for more efficient electron accumulation, and therefore less power is required for switching.
Fujitsu’s newly-developed low-power technologies for optical switch devices represent a significant
The consortium will develop European technology for the complete production chain for semiconductor devices built with SiC (Silicon Carbide) and heteroepitaxial GaN (Gallium Nitride on silicon wafers). These two semiconductor materials offer higher speed, current capability, breakdown voltage and thermal capability compared to conventional silicon technologies.
“The power semiconductor market, which represents approximately 30% of the overall semiconductor market, is set to change significantly in response to the ever-increasing demand for more
November/December 2010
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