Power Electronics ♦ industry news
realize healthy and safe lifestyles through various environmental protection measures, including those against global warming. And the security of energy supply should be achieved through reductions in dependence on fossil fuels and conservation of energy.
To meet these global market requirements, SDK has decided to focus on the two business domains of “Energy/Environment” and “Electronics.” It will provide components, materials and solutions in these areas based on its proprietary advanced technologies, thereby contributing to the creation of society in which affluence and sustainability are harmonized.
In the business portfolio SDK aims to enhance businesses in the following three categories: growing base businesses, stable base businesses, and growth/new growth businesses. It will concentrate its managerial resources on globally competitive operations.
The firm will expand businesses in high-purity gases for semiconductor processing and various functional materials. SDK also aims to quickly commercialize new businesses in SiC epitaxial wafers for power devices, and ally derivatives such as heat-resistant transparent films.
In addition to existing managerial resources, SDK will utilize M&A and partnerships, when necessary for promotion of business strategies and R&D, to accelerate the speed of launching new businesses.
Under PEGASUS, the firm will aim to record operating income of JPY 80 billion and free cash flows of JPY 40 billion in 2013.
Soitec and SEI Collaborate on GaN Substrate Development
Applications for the engineered substrates include high brightness LEDs and electric power devices designed for hybrid and full electric vehicles.
Soitec, a leading supplier of engineered substrates and Sumitomo Electric Industries (SEI) a worldwide provider of compound semiconductor materials,
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www.compoundsemiconductor.net November/December 2010
are working together to develop engineered gallium nitride (GaN) substrates.
The alliance will draw on Sumitomo Electric’s sophisticated GaN wafer manufacturing technology and Soitec’s unique Smart Cut layer transfer technology by which ultra-thin GaN layers are transferred from a single GaN wafer to produce multiple, engineered GaN substrates.
The engineered substrates retain the original, high crystalline quality of Sumitomo Electric’s GaN wafer at a lower cost. This technology will therefore facilitate widespread use of GaN substrates in applications like high brightness LEDs as well as electric power devices designed for hybrid and full electric vehicles.
“Our collaboration with Soitec will open the door to high quality, lower cost GaN substrates,” said Masamichi Yokogawa, Sumitomo Electric’s Executive Officer and General Manager of Compound Semiconductor Material Division. “We have demonstrated that the transfer of a thin layer of our high quality GaN crystal to a carrier wafer is the right approach to make our GaN material accessible for various applications such as power devices and white LEDs. We are expecting the collaboration with Soitec will enable wider use of our high-quality GaN wafer. We believe device manufacturers focused on low unit area costs will find value in the greater functionality of these engineered substrates.”
“We are delighted to work with Sumitomo Electric and excited about what we have been able to achieve together so far. We are partnering with the leader in GaN wafer manufacturing to offer engineered substrates that have the best crystal quality available today. This collaboration represents the first step of an important move in our strategy to address the need for dramatically improved efficiency in power conversion and lighting with innovative materials engineering solutions,” said Andre-Jacques Auberton-Herve, CEO of Soitec.
The Soitec Group is an innovator and provider of the engineered substrate solutions that serve as the foundation for advanced microelectronic products. The group leverages its proprietary Smart Cut technology to engineer new substrate solutions, such as silicon-on-insulator (SOI) wafers, which
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