Silicon Drift Detector
NO LN2 • Active area ~ 40 mm
2
• <130 eV FWHM at 5.9 keV • ICR 1.5 Mcps • OCR up to 350 kcps
FULL-PAGE
ADVERTISEMENT
-EM
null
BREAKTHROUGH
C and the B peaks are completely separated from noise by the Vortex-EM
detector. It therefore, facilitates light element detection while performing
PERFORMANCE
microanalysis and fast elemental mapping applications.
Boron Carbon Boron Nitride
EDS • Fast Mapping • SEM • Microanalysis • Process Control • Synchroton • TXRF • SR-TXRF
SII NanoTechnology USA Inc. • 19865 Nordhoff Street, Northridge, CA 91324 • TEL: 818-280-0745 • FAX: 818-280-0408 • www.siintusa.com
Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76