Hyperion Ion Probe
die to die. Hyperion can not only provide a high brightness
solution for ion projection lithography systems, but also has the
potential to create sub-10 nm resolution beams with a range of
useful ion species for focused ion beam lithography.
The MicroBeam NanoFab 150 system has been in existence
for over 30 years and is based on technologies developed at
Hughes Electronics Inc. However, it remains one of the most
advanced ion optical systems, providing ion energies of up to
150 keV and frequently employed for modifying the electrical
and optical properties of semiconductor materials. The system
utilizes a two-lens optical column and an E × B filter with a
mass resolution of ~50.
Extrapolating from our demonstrated ion source perform-
ance, calculations show that the Hyperion source operating
on this system—again with an extra lens added to match the
Figure 7: 150keV Nano-Implantation with Hyperion and a NanoFAB150 (MBI). source to the column—would result in a system for up to 150
keV nano-implantation with sub-10 nm resolution with beam
immediately after the extraction optic would result in the
currents between 0.1 and 1pA. Figure 7 shows the anticipated
performance indicated by the red line of Figure 6. The
performance of the source, coupled with the NanoFab 150
additional lens operates with a shorter object side focal length
Direct Write Implanter for a select few ion species. Even with a
than the existing condenser lens to allow for lower angular
beam current of only 0.1 pA, patterned ion implantation over a
magnification, avoiding the issue of gross spherical blur at
10mmx10mm field of view could take less than 5 minutes for a
high-beam currents.
moderate areal dose of 1x10
14
cm
-2
.
This duoplasmatron-FLIG has a peak current density
Conclusions
in the final probe with a beam current of ~100 nA at 500 eV.
Hyperion is a plasma ion source that operates with a
Operating with a third lens, the Hyperion FLIG has a peak
maximum energy normalized brightness of 1x10
4
Am
-2
sr
-
current density that is a factor of 10 higher at a current of
1
V
-1
and an associated axial energy spread of 5-6 eV. This
400 nA. Above 400 nA, global space charge effects in the final
revolutionary development, recently commercialized at Oregon
cross-over limits the current density.
Physics, is now consistently being used for numerous FIB
On occasions when a large area depth profile is a
requirement for the best detection limit, Hyperion would be
milling applications with an operating lifetime that exceeds
capable of providing a gain in current density and analysis
both the duoplasmatron and the LMIS. This technology is
speed of a factor of 40-100 with beam currents in the range of
destined to significantly expand the capabilities of ion beam
500-1000 nA. This added enhancement is partly due to reduced
techniques used in surface science and engineering in the
optical aberrations because the added lens operates with the
coming months and years.
shorter object side focal length. The added enhancement is also
References
partly due to the higher brightness and lower energy spread.
[1] N Smith, P Tesch, N Martin, and D Kinion, Applied Surface
For high energy (10-30 keV) SIMS imaging, the lateral
Science 255 (2008) 1606.
image resolution is ultimately limited by the size of the
[2] P Tesch, N Smith, N Martin, and D Kinion, Conf Proc from
collision cascade. However, to date the performance of the
ISTFA (2008) in press.
duoplasmatron oxygen ion source has not been sufficient to
[3] CD Coathe and JVP Long, Rev Sci Instrum 66 (1995) 1018.
come close to this theoretical limit. With a 3-lens focusing ion
[4] J Orloff, J Vac Sci Technol B 5 (1987) 175.
column, operating with a short objective lens focal length of
[5] IU Abhulimen, A Kamto, and Y Liu, J Vac Sci Technol B 26
~20 mm, it is possible to focus a 10 pA oxygen beam to ~150
(2008) 1834.
nm at 30 keV with the duoplasmatron. Because we are again
[6] J Dunn,
http://www.planetanalog.com/showArticle?arti
operating at the chromatic limit, Hyperion provides a factor of
50 higher optical performance and an imaging resolution at or
cleID=185303171, (2006).
very close to the theoretical limit.
[7] W Vandervoorst, Applied Surface Science 255 (2008) 805.
[8] MG Dowsett, NS Smith, R Bridgeland, C Richards, AC
Nano-Ion Implantation
Lovejoy, and P Pedrick, SIMS X Proceedings, John Wiley and
Nano-focused ion beams can write arbitrary patterns on
Sons (1996) 367.
a target sample without the need for a mask. The LMIS has
[9] J Melngailis, Proceedings of the 2001 Particle Accelerator
been employed by various high-energy FIB systems to provide
Conference, Chicago (2001) 76-80.
nano-scale maskless ion implantation, but again this ion source
[10] The figure-of-merit at the chromatic limit is the energy
provides a limited selection of ion species that are suitable for normalized source brightness β
r
, divided by the square of the
the semiconductor field [9]. The attraction of FIB implantation axial energy spread, ∆E for the source (ie β
r
/∆E
2
). Focused
is that it is a very flexible, maskless and resistless process, where beams typically operate in this regime with high-energy/
the dose can be varied from point to point on a wafer. Thus low-current beams and low-energy beams.
one can vary the dopant dose across a device as well as from
22
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